SANKEN 2SA1907

2SA1907
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099)
–10max
µA
–6
V
V(BR)CEO
IC=–50mA
–80min
V
–6
A
hFE
–3
A
VCE(sat)
IC=–12A, IB=–0.2A
–0.5max
V
PC
60(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
150
°C
COB
VCB=–10V, f=1MHz
150typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–30
10
–3
–10
5
–0.3
0.3
0.18typ
1.10typ
0.21typ
–20mA
–2
I B =–10mA
–1
0
–1
0
–2
–3
–4
–1
–2A
0
0
–0.5
–1.0
(V C E =–4V)
300
DC Cur rent Gain h FE
Typ
100
50
125˚C
25˚C
–30˚C
100
50
30
–0.02
–5 –6
–0.1
Collector Current I C (A)
–1
–0.5
–1.5
–1
–5 –6
θ j-a – t Characteristics
5
1
0.5
0.3
1
10
Collector Current I C (A)
f T – I E Characteristics (Typical)
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
60
–10
DC
0m
s
ms
s
he
at
si
nk
Without Heatsink
Natural Cooling
ite
–0.5
fin
–1
40
In
10
–5
10
ith
20
1m
10
W
Collecto r Cur rent I C ( A)
Typ
Ma xim um Powe r Dissipation P C (W)
–20
30
Cu t-of f Fr eque ncy f T ( MH Z )
DC Curr ent Gain h F E
0
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
300
–1
0
–1.5
(V C E =–4V)
–0.5
p)
I C =–6A
Base Current I B (A)
h FE – I C Characteristics (Typical)
–0.1
–2
–4A
Collector-Emitter Voltage V C E (V)
30
–0.02
Tem
–30mA
–4
se
–3
–2
(Ca
–50mA
(V CE =–4V)
˚C
–4
E
125
A
–8 0m A
Collector Current I C (A)
–1 00 m
–5
C
Weight : Approx 6.5g
a. Type No.
b. Lot No.
–6
–3
A
θ j- a ( ˚C/W)
–1
m
50
3.35
1.5
I C – V BE Temperature Characteristics (Typical)
Transient Thermal Resistance
0
A
Collector-Emitter Saturation Voltage V C E (s at) (V )
Collector Current I C (A)
–2
0m
4.4
B
V CE ( sa t ) – I B Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
1.5
VCC
(V)
–6
0.8
2.15
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
1.75
mp)
Tstg
e Te
Tj
ø3.3±0.2
a
b
3.3
IB
3.45 ±0.2
3.0
50min∗
VCE=–4V, IC=–2A
0.8±0.2
VEB=–6V
5.5
IEBO
5.5±0.2
1.6
V
15.6±0.2
(Cas
IC
µA
–30˚C
VEBO
–10max
)
–80
VCB=–80V
emp
VCEO
ICBO
se T
V
Unit
(Ca
–80
2SA1907
25˚C
VCBO
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
Symbol
23.0±0.3
Unit
9.5±0.2
■Electrical Characteristics
(Ta=25°C)
2SA1907
Symbol
16.2
■Absolute maximum ratings
Application : Audio and General Purpose
20
Without Heatsink
0
0.02
0.05 0.1
0.5
1
Emitter Current I E (A)
5 6
–0.1
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
35