SANKEN 2SB1587

(7 0 Ω ) E
2SB1587
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438)
Unit
Conditions
2SB1587
Unit
–160
V
ICBO
VCB=–160V
–100max
µA
VCEO
–150
V
IEBO
VEB=–5V
–100max
µA
VEBO
–5
V
V(BR)CEO
IC=–30mA
–150min
V
IC
–8
A
hFE
VCE=–4V, IC=–6A
5000min∗
IB
–1
A
VCE(sat)
IC=–6A, IB=–6mA
–2.5max
PC
75(Tc=25°C)
W
VBE(sat)
IC=–6A, IB=–6mA
–3.0max
V
Tj
150
°C
fT
VCE=–12V, IE=1A
65typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
160typ
pF
Tstg
3.0
3.3
1.75
IC
(A)
1.05 +0.2
-0.1
5.45±0.1
10
–60
–6
5
–10
4.4
B
0.9typ
3.6typ
C
Weight : Approx 6.5g
a. Type No.
b. Lot No.
E
I C – V BE Temperature Characteristics (Typical)
0
0
–2
–4
0
–0.2
–6
–0.5 –1
Collector-Emitter Voltage V C E (V)
–5
–10
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
40,000
50000
10,000
5,000
–1
–5
–8
Transient Thermal Resistance
Typ
D C Cur r ent Gai n h F E
25˚C
10000
–30˚C
5000
1000
–0.2
–0.5
Collector Current I C (A)
–1
–5
0.2
–8
C
m
s
s
–100
–200
nk
–50
si
–10
40
at
–5
Collector-Emitter Voltage V C E (V)
he
8
60
ite
Without Heatsink
Natural Cooling
–0.1
5
2000
fin
Collect or Cur ren t I C (A)
D
10
0m
–1
–0.05
–2
500 1000
P c – T a Derating
–0.5
20
)
mp)
50 100
Time t(ms)
In
40
1
10
ith
60
0.5
5
W
Cut- off F req uency f T (M H Z )
10
–5
Emitter Current I E (A)
1
80
–10
Typ
e Te
0.5
–20
80
Cas
1
Safe Operating Area (Single Pulse)
100
–3
4
(V C E =–12V)
0.1
–2
Collector Current I C (A)
f T – I E Characteristics (Typical)
0.05
–1
θ j-a – t Characteristics
Maximu m Power Dissi pation P C (W)
DC Cur rent Gain h FE
125˚C
0
0.02
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.5
0
–50 –100 –200
Base Current I B (mA)
h FE – I C Characteristics (Typical)
2,000
–0.2
p)
–2
˚C (
–1
–4
Tem
–6A
I C =–4A
emp
I B =–0.3mA
–2
–8A
–6
se T
–0.5m A
–4
–2
–30
–0.8m A
se
–1 .0 mA
–6
(Ca
Collector Current I C (A)
–1. 3m A
(V C E =–4V)
–8
–3
25˚C
–
1 .5 m A
˚C
A
125
– 1 .8 m
Collector Current I C (A)
A
θ j - a (˚ C/W)
m
–2.0
(Ca
Collector-Emitter Saturation Voltage V C E (s a t) (V )
.5
–10
–8
–2
mA
m
A
V CE ( sat ) – I B Characteristics (Typical)
3.35
1.5
tf
(µs)
tstg
(µs)
0.7typ
6
–6
I C – V CE Characteristics (Typical)
ton
(µs)
IB2
(mA)
0.65 +0.2
-0.1
5.45±0.1
1.5
IB1
(mA)
VBB2
(V)
VBB1
(V)
0.8
2.15
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
3.45 ±0.2
ø3.3±0.2
a
b
V
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
VCC
(V)
5.5±0.2
5.5
15.6±0.2
23.0±0.3
Symbol
0.8±0.2
2SB1587
VCBO
Symbol
External Dimensions FM100(TO3PF)
(Ta=25°C)
1.6
■Electrical Characteristics
(Ta=25°C)
C
Application : Audio, Series Regulator and General Purpose
9.5±0.2
■Absolute maximum ratings
Equivalent circuit
16.2
Darlington
B
20
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
49