SANKEN 2SB1588

(7 0 Ω ) E
2SB1588
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439)
2SB1588
Unit
VCBO
–160
V
ICBO
VCB=–160V
–100max
µA
VCEO
–150
V
IEBO
VEB=–5V
–100max
µA
V
2SB1588
Unit
15.6±0.2
–5
V
V(BR)CEO
IC=–30mA
–150min
IC
–10
A
hFE
VCE=–4V, IC=–7A
5000min∗
IB
–1
A
VCE(sat)
IC=–7A, IB=–7mA
–2.5max
PC
80(Tc=25°C)
W
VBE(sat)
IC=–7A, IB=–7mA
–3.0max
V
Tj
150
°C
fT
VCE=–12V, IE=2A
50typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
230typ
pF
23.0±0.3
VEBO
3.0
3.3
1.75
1.05 +0.2
-0.1
5.45±0.1
–4
I B =–0.4mA
–2
0
0
–2
–4
–7A
I C =–5A
–1
0
–0.2
–0.5 –1
–5
–10
(V C E =–4V)
50,000
DC Cur rent Gain h FE
Typ
10,000
5,000
125˚C
10,000
25˚C
5,000
–30˚C
1,000
–5
–10
500
–0.2
–0.5
Collector Current I C (A)
–1
–5
–10
1
0.5
0.1
5
P c – T a Derating
m
s
s
DC
si
nk
Without Heatsink
Natural Cooling
20
40
at
–0.5
he
–1
60
ite
Maxim um Power Dissip ation P C (W)
–5
10
0m
fin
Co lle ctor Cu rre nt I C (A)
10
In
40
20
–0.1
0.5
1
Emitter Current I E (A)
50
5
10
–0.05
–3
500 1000
ith
Typ
50 100
80
–10
0.05 0.1
10
W
Cut -off Fre quen cy f T (M H Z )
1
Time t(ms)
–30
80
–2.5
3
Safe Operating Area (Single Pulse)
100
–2
θ j-a – t Characteristics
(V C E =–12V)
0
0.02
–1
Collector Current I C (A)
f T – I E Characteristics (Typical)
60
0
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
40,000
DC Cur rent Gain h FE
0
–50 –100 –200
Base Current I B (mA)
(V C E =–4V)
–1
–4
–2
–6
h FE – I C Characteristics (Typical)
–0.5
–6
)
–10A
Collector-Emitter Voltage V C E (V)
1,000
–0.2
–8
)
–0.6m A
–2
(V C E =–4V)
Temp
–0.8m A
–6
–10
Temp
–1.0 mA
–3
Transient Thermal Resistance
Collector Current I C (A)
–1. 2mA
I C – V BE Temperature Characteristics (Typical)
(Case
–1 .5m A
–8
V CE ( sat ) – I B Characteristics (Typical)
–30˚C
mA
1.2typ
E
(Cas
– 2 .0
Collector-Emitter Saturation Voltage V C E (s a t) (V )
–2
A
–10
mA
–10
m
.5
3.0typ
C
mp)
I C – V CE Characteristics (Typical)
0.8typ
7
–7
Weight : Approx 6.5g
a. Type No.
b. Lot No.
tf
(µs)
B
3.35
1.5
e Te
5
–10
tstg
(µs)
4.4
125˚C
–7
ton
(µs)
IB2
(mA)
IB1
(mA)
Collector Current I C (A)
10
VBB2
(V)
VBB1
(V)
0.65 +0.2
-0.1
5.45±0.1
1.5
θ j - a ( ˚C/W)
–70
IC
(A)
0.8
2.15
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
3.45 ±0.2
ø3.3±0.2
a
b
V
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
VCC
(V)
5.5±0.2
(Case
Tstg
0.8±0.2
Conditions
5.5
Symbol
25˚C
Symbol
External Dimensions FM100(TO3PF)
(Ta=25°C)
1.6
■Electrical Characteristics
(Ta=25°C)
C
Application : Audio, Series Regulator and General Purpose
9.5±0.2
■Absolute maximum ratings
Equivalent circuit
16.2
Darlington
B
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
Without Heatsink
0
25
50
75
100
Ambient Temperature Ta(˚C)
125
150
2000