(7 0 Ω ) E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) VCB=–150V –100max µA V IEBO VEB=–5V –100max µA V VEBO –5 V V(BR)CEO IC –15 A hFE IC=–30mA –150min VCE=–4V, IC=–10A 5000min∗ A VCE(sat) IC=–10A, IB=–10mA –2.5max IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A 45typ MHz VCB=–10V, f=1MHz 320typ IB –1 PC 130(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150 °C Tstg COB 15.6±0.4 9.6 1.8 ICBO a ø3.2±0.1 pF 2 3 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 4 10 –10 5 –10 10 0.7typ 1.6typ 1.1typ –4 –0.5 –1 Collector-Emi tter Voltage V C E (V) –10 Typ 10,000 5,000 –0.5 –1 –5 –10 –15 Collector Current I C (A) 125˚C 25˚C –30˚C 10000 5000 1000 –0.2 –0.5 –1 –5 –10 –15 1000 2000 P c – T a Derating 130 at si nk Ma xim um Powe r Dissipation P C ( W) 100 he 10 100 Time t(ms) ite 5 ) 10 fin Cut- off F req uency f T ( MH Z ) 1 In 54 p) 0.1 ith 1 emp 0.5 W 0.5 Emitter Current I E (A) Tem 1 60 20 –3 3 Safe Operating Area (Single Pulse) 40 –2 θ j-a – t Characteristics θ j- a ( ˚C/W) (V C E =–4V) (V C E =–12V) 0.05 0.1 –1 Collector Current I C (A) f T – I E Characteristics (Typical) 0 0.02 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 50000 1,000 –0.2 0 –50 –100 –200 (V C E =–4V) DC Cur r ent Gai n h F E DC Cur r ent Gai n h F E –5 Base Current I B (mA) h FE – I C Characteristics (Typical) 50,000 –5 –30 0 –0.2 –6 I C =–5A –1 se I C =–1 0A –10 se T I C =–15A (Ca –5 –2 (V C E =–4V) (Ca I B =–0.3mA –2 –15 ˚C –0. 5m A 0 –3 25˚C –0.8 mA –10 0 I C – V BE Temperature Characteristics (Typical) 125 A m –2 Collector Current I C (A) –1 .0m A 1.4 E V CE ( sa t ) – I B Characteristics (Typical) Collector Current I C (A) –1.5mA –15 C Weight : Approx 6.0g a. Type No. b. Lot No. Transient Thermal Resistance –50mA –10mA –3mA Collector-Emitter Saturation Voltage V C E (s at) (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) 2.0±0.1 b V VCC (V) 4.8±0.2 5.0±0.2 –150 Unit mp) VCEO 2SB1647 e Te V External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Cas –150 Symbol C ˚C ( VCBO ■Electrical Characteristics 2.0 Unit 4.0 2SB1647 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Equivalent circuit Application : Audio, Series Regulator and General Purpose 20.0min Darlington B 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150