SANKEN 2SC2922

2SC2922
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216)
Symbol
ICBO
Conditions
2SC2922
Unit
VCB=180V
100max
µA
VEB=5V
100max
µA
IC=25mA
180min
V
24.4±0.2
VCEO
180
V
IEBO
VEBO
5
V
V(BR)CEO
IC
17
A
hFE
VCE=4V, IC=8V
IB
5
A
VCE(sat)
IC=8A, IB=0.8A
2.0max
V
PC
200(Tc=25°C)
W
fT
VCE=12V, IE=–2A
50typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
250typ
pF
–55 to +150
°C
∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)
2-ø3.2±0.1
7
a
b
IC
(A)
VB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
40
4
10
–5
1
–1
0.2typ
1.3typ
0.45typ
V CE ( sat ) – I B Characteristics (Typical)
50mA
I B =20mA
0
1
0
2
3
0
4
0
0.2
0.4
0.6
0.8
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
200
Typ
50
1
5
10
125˚C
Transient Thermal Resistance
DC Cur rent Gain h F E
100
100
25˚C
–30˚C
50
10
0.02
17
Collector Current I C (A)
0.1
0.5
1
5
10 17
0.5
0.1
nk
Collector-Emitter Voltage V C E (V)
300
si
100
at
10
he
2
120
ite
Without Heatsink
Natural Cooling
fin
1
160
In
Collector Cur rent I C (A)
2000
ith
Emitter Current I E (A)
–10
1000
W
Maxim um Power Di ssip ation P C (W)
s
5
0.2
–5
100
P c – T a Derating
DC
10
0.5
–1
10
200
m
20
–0.1
1
Time t(ms)
10
40
0
–0.02
p)
1
Safe Operating Area (Single Pulse)
Typ
2.4
θ j-a – t Characteristics
50
80
2
2
(V C E =12V)
60
1
Collector Current I C (A)
f T – I E Characteristics (Typical)
Cut -off Fre quency f T ( MH Z )
DC C urrent G ain h FE
200
0.5
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.1
0
1.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
10
0.02
5
5A
Collector-Emitter Voltage V C E (V)
p)
I C =10A
1
Tem
5
10
em
100 mA
2
eT
A
as
200m
10
15
(C
mA
Weight : Approx 18.4g
a. Type No.
b. Lot No.
(V C E =4V)
5˚C
300
E
17
3
12
Collector Current I C (A)
15
mA
mA
500
A
400m
25
600
Collector Current I C (A)
A
3.0 +0.3
-0.1
5.45±0.1
C
I C – V BE Temperature Characteristics (Typical)
θ j - a (˚C /W)
0m
Collector-Emitter Saturation Voltage V C E(s a t) (V )
A
1.5
70
0.65 +0.2
-0.1
1.05 +0.2
-0.1
B
RL
(Ω)
1A
2
3
5.45±0.1
VCC
(V)
17
9
21.4±0.3
30min∗
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
2.1
se
Tstg
6.0±0.2
36.4±0.3
(Ca
V
˚C
Unit
180
–30
2SC2922
VCBO
External Dimensions MT-200
(Ta=25°C)
˚C
Symbol
■Electrical Characteristics
4.0max
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
20.0min
LAPT
80
40
5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
61