SANKEN 2SC3890

2SC3890
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
µA
IEBO
VEB=10V
100max
µA
V(BR)CEO
IC=25mA
400min
V
hFE
VCE=4V, IC=3A
10 to 30
IB
2
A
VCE(sat)
IC=3A, IB=0.6A
0.5max
PC
30(Tc=25°C)
W
VBE(sat)
IC=3A, IB=0.6A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–0.5A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
50typ
pF
3.9
V
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
66
3
10
–5
0.3
–0.6
1max
3max
0.5max
2
3
12
0.05
0.1
Collector-Emitter Voltage V C E (V)
t o n• t s t g • t f (µ s)
Typ
Switching T im e
DC Cur rent Gain h FE
50
10
0.5
1
1
5
7
0.5
p)
0.2
t on
0.1
0.2
0.5
1
0.4
5
7
5
1
0.3
1
10
10
mp)
e Te
P c – T a Derating
fin
ite
he
at
si
nk
Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
20
In
Collector Curre nt I C (A)
1000
ith
1
0.5
100
W
5
Without Heatsink
Natural Cooling
1.2
30
s
1
1.0
Time t(ms)
Reverse Bias Safe Operating Area
5
0.8
0.5
Collector Current I C (A)
0µ
0.6
θ j-a – t Characteristics
20
0.5
0
Base-Emittor Voltage V B E (V)
tf
20
10
Tem
0
5 7
1
Safe Operating Area (Single Pulse)
10
se
C
t s tg
V C C 200V
I C :I B1 :I B 2 =10:1:–2
Collector Current I C (A)
Co lle ctor Cu rre nt I C (A)
0.5
5˚
7
5
70
0.1
–5
t on •t stg • t f – I C Characteristics (Typical)
(V C E =4V)
0.05
5
Collector Current I C (A)
h FE – I C Characteristics (Typical)
7
0.02
2
˚C
V C E (sat)
0
0.02
4
)
Temp
θ j - a (˚ C/W)
1
(Case
4
Transient Thermal Resistance
0
125˚C
M aximu m Power D issi pation P C (W)
0
mp)
e Te
25˚C (Cas
(Ca
100mA
2
e Temp)
–55˚C (Cas
˚C
200 mA
1
125
4
6
V B E (sat)
Collector Current I C (A)
300 mA
(V C E =4V)
7
as
e
2 5 Tem
p)
˚C
40 0m A
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
(C
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E (s a t) (V )
800
mA
Collector Current I C (A)
I B=
6
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B C E
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
A
600m
2.4±0.2
2.2±0.2
VCC
(V)
7
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
1.35±0.15
(Cas
Tstg
ø3.3±0.2
a
b
)
A
–55˚C
7(Pulse14)
IC
emp
V
se T
V
10
(Ca
400
VEBO
4.2±0.2
2.8 c0.5
25˚C
VCEO
10.1±0.2
4.0±0.2
Unit
100max
ICBO
0.8±0.2
2SC3890
VCB=500V
V
16.9±0.3
Conditions
Unit
500
±0.2
Symbol
2SC3890
VCBO
13.0min
Symbol
External Dimensions FM20(TO220F)
(Ta=25°C)
8.4±0.2
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
10
Without Heatsink
2
0.1
5
10
50
100
Collector-Emitter Voltage V C E (V)
500
0.1
5
10
50
100
Collector-Emitter Voltage V C E (V)
500
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
81