2SC4153 Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor) µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 3.9 V 1.35±0.15 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) –5 mA 5 60m A 4 40mA 3 20m A 2 I B =10mA 1 0 0 1 2 3 3 6 2 1 0 0.005 0.01 3 1 0.1 1 0 2 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =4V) Typ 100 50 1 12 5˚ C Transient Thermal Resistance DC Curr ent Gain h FE 300 25˚C 100 –30 20 0.01 5 7 ˚C 50 0.1 Collector Current I C (A) 0.5 1 5 7 θ j-a – t Characteristics 5 1 0.5 0.2 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 1.1 0.5 Base Current I B (A) 300 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 40 10 30 0µ s Natural Cooling Silicone Grease Heatsink: Aluminum in mm he 100x100x2 at si 10 nk Collector Cur rent I C (A) 150x150x2 ite 0.1 fin Without Heatsink Natural Cooling In 0.5 ith 1 20 W 10 ms 20 10 5 30 Ma xim um Powe r Dissipat io n P C (W) 10 Typ Cut- off F req uency f T (M H Z ) DC Curr ent Gain h FE 4 5A 3A I C = 1A (V C E =4V) 0.5 5 2 4 h FE – I C Characteristics (Typical) 0.1 (V C E =4V) 7 Collector-Emitter Voltage V C E (V) 20 0.01 I C – V BE Temperature Characteristics (Typical) p) mA 100 0.5max Tem 150 3max se mA 5 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 200 0.5max Weight : Approx 2.0g a. Type No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 7 –0.6 0.3 tf (µs) (Ca 10 tstg (µs) ton (µs) ˚C 3 IB2 (A) IB1 (A) 125 16.7 50 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) 2.4±0.2 2.2±0.2 θ j- a ( ˚ C/W) RL (Ω) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 ) Tstg ø3.3±0.2 a b Temp A 100max (Case 7(Pulse14) IC VEB=8V IC=50mA –30˚C V(BR)CEO 4.2±0.2 2.8 c0.5 4.0±0.2 IEBO V 10.1±0.2 0.8±0.2 V 8 µA ±0.2 120 VEBO 100max mp) VCEO Unit VCB=200V e Te ICBO (Cas V 2SC4153 25˚C 200 External Dimensions FM20(TO220F) (Ta=25°C) Conditions 16.9±0.3 Unit VCBO Symbol 13.0min 2SC4153 8.4±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Humidifier, DC-DC Converter, and General Purpose 50x50x2 Without Heatsink 2 0 –0.01 0.05 –0.1 –1 Emitter Current I E (A) –5 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 93