SANKEN 2SC4297

2SC4297
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Unit
VCB=500V
100max
µA
VCEO
400
V
IEBO
VEB=10V
100max
µA
10
V
V(BR)CEO
IC=25mA
400min
V
12(Pulse24)
A
hFE
VCE=4V, IC=7A
10 to 30
IB
4
A
VCE(sat)
IC=7A, IB=1.4A
0.5max
PC
75(Tc=25°C)
W
VBE(sat)
IC=7A, IB=1.4A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
10typ
MHz
°C
COB
VCB=10V, f=1MHz
105typ
pF
ø3.3±0.2
a
b
3.3
3.0
V
1.75
1.05 +0.2
-0.1
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
28.5
7
10
–5
0.7
–1.4
1max
3max
0.5max
0
1
0
2
3
12
5˚
C
–5
V C E (sat)
0
0.02
4
0.05 0.1
Collector-Emitter Voltage V C E (V)
0.5
1
5
5˚
0
10
t on •t stg • t f – I C Characteristics (Typical)
8
t on• t s t g • t f (µ s)
50
–30˚C
10
0.5
1
5
10 12
5
t s tg
V C C 200V
I C :I B1 :–I B 2 =10:1:2
1
0.5
t on
tf
0.1
0.5
1
30
5
10
0.1
1
10
100
1000
P c – T a Derating
80
500
Collector Curr ent I C (A)
nk
100
si
50
Collector-Emitter Voltage V C E (V)
40
at
10
he
0.1
5
Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
ite
500
0.5
fin
0.1
1
60
In
Without Heatsink
Natural Cooling
5
ith
1
Collector-Emitter Voltage V C E (V)
)
0.5
W
5
100
1.2
Time t(ms)
10
50
1.0
s
10
10
0.8
1
M aximum Power Dissipa ti on P C (W)
0µ
0.6
2
30
10
5
0.4
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.5
0.2
Collector Current I C (A)
Collector Current I C (A)
Co lle ctor Cu rre nt I C ( A)
Transient Thermal Resistance
25˚C
Swi tchi ng T im e
DC Cur rent Gain h F E
125˚C
0.1
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.05
p)
2
C
Collector Current I C (A)
h FE – I C Characteristics (Typical)
5
0.02
4
Temp
125˚C
6
mp)
mp)
Te
(Case
Tem
e Temp)
25˚C (Cas
8
(Case
I B =100mA
2
Temp)
se
200mA
4
–55˚C (Case
(Ca
6
1
˚C
400m A
(V CE =4V)
125
8
E
10
V B E (sat)
θ j - a (˚ C/W)
Collector Current I C (A)
60 0m A
Weight : Approx 6.5g
a. Type No.
b. Lot No.
12
Collector Current I C (A)
80 0m A
10
C
3.35
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
as
e
2 5 Temp
)
˚C
1A
1.5
(C
12
4.4
B
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
I C – V CE Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
1.5
VCC
(V)
0.8
2.15
e Te
–55 to +150
3.45 ±0.2
–55˚C
Tstg
5.5±0.2
(Cas
IC
15.6±0.2
25˚C
VEBO
Symbol
0.8±0.2
2SC4297
ICBO
5.5
Conditions
V
1.6
Unit
500
23.0±0.3
2SC4297
VCBO
16.2
Symbol
External Dimensions FM100(TO3PF)
(Ta=25°C)
9.5±0.2
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
20
3.5
0
Without Heatsink
0
50
100
150
Ambient Temperature Ta(˚C)
95