2SC4445 Application : Switching Regulator and General Purpose Conditions 2SC4445 Unit V ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 60(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 15typ MHz °C COB VCB=10V, f=1MHz 50typ pF 3.3 3.0 V 1.5 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 357 0.7 10 –5 0.1 –0.35 0.7max 4max 0.7max 2 3 V C E (sat) 2 p) –55˚C (Case Tem p) 25˚C (Case Tem Temp) 125˚C (Case 0.05 Collector-Emitter Voltage V C E (V) 0.1 0.5 1 7 5 –55˚C 10 5 0.5 1 3 1 tf 0.5 t on 0.1 0.1 0.5 5 5 0.3 1 10 10 50 Collector Curr ent I C (A) p) nk 5 si 1000 at 500 he 100 Collector-Emitter Voltage V C E (V) Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 40 ite 0.05 P c – T a Derating fin 0.05 1000 60 0.5 0.1 100 Time t(ms) 1 0.1 50 2 In Without Heatsink Natural Cooling 1.2 ith s 0.5 1.0 W 0µ µs 10 1 10 1 50 Collector Curr ent I C (A) 10 0.8 0.5 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.6 1 Collector Current I C (A) Collector Current I C (A) 5 0.4 4 Ma xim um Powe r Dissipat io n P C (W) 0.1 t s tg V C C 250V I C :I B1 :–I B 2 =10:1.5:5 Transient Thermal Resistance t o n• t s t g• t f (µ s) 25˚C 0.2 θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) Sw it ching Time DC C urrent G ain h FE 125˚C 0.05 0 Base-Emittor Voltage V B E (V) (V C E =4V) 2 0.01 mp) 0 3 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 50 1 e Tem V B E (sat) 1 2 e Te 25˚C (Case Temp) 125˚C (Case Temp) (Cas –55˚C (Case Temp) 0 0.01 4 (V CE =4V) 3 θ j - a ( ˚ C/W) 1 0 E –55˚C 50mA C Weight : Approx 6.5g a. Type No. b. Lot No. Cas 100mA 1 3.35 1.5 ˚C ( 200m A 4.4 125 300m A 2 0.65 +0.2 -0.1 5.45±0.1 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) Collector Current I C (A) 500 mA 0 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I B =700mA 0.8 2.15 1.05 +0.2 -0.1 VCC (V) 3 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b mp) –55 to +150 3.45 ±0.2 e Te Tstg 5.5±0.2 (Cas IC 15.6±0.2 25˚C VEBO 0.8±0.2 Unit 900 23.0±0.3 2SC4445 VCBO Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 5.5 Symbol 1.6 ■Electrical Characteristics 16.2 ■Absolute maximum ratings (Ta=25°C) 9.5±0.2 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 20 Without Heatsink 100 Collector-Emitter Voltage V C E (V) 500 1000 3.5 0 0 50 100 150 Ambient Temperature Ta(˚C) 105