SANKEN 2SC4511

2SC4511
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725)
V(BR)CEO
IC
6
A
hFE
VEB=6V
10max
µA
IC=25mA
80min
V
VCE=4V, IC=2A
50min∗
10.1±0.2
3
A
VCE(sat)
IC=2A, IB=0.2A
0.5max
V
PC
30(Tc=25°C)
W
fT
VCE=12V, IE=–0.5A
20typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
110typ
pF
–55 to +150
°C
∗hFE Rank
Tstg
1.35±0.15
1.35±0.15
O(50 to100), P(70 to140), Y(90 to180)
0.3
A
1
m
00
A
A
80m
Collector Current I C (A)
5
50 mA
4
3
30mA
2
20mA
I B =10mA
1
0
0
1
2
3
0.34typ
I C – V BE Temperature Characteristics (Typical)
2
1
2A
0
0
0.5
1.0
0
1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
200
50
1
100
25˚C
–30˚C
50
20
0.02
56
Transient Thermal Resistance
DC Cur rent Gain h FE
Typ
0.1
Collector Current I C (A)
0.5
1
56
5
1
0.5
0.4
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
2
Base-Emittor Voltage V B E (V)
125˚C
DC Curr ent Gain h F E
0
1.5
Base Current I B (A)
300
0.5
2
I C =6A
(V C E =4V)
0.1
4
4A
4
h FE – I C Characteristics (Typical)
30
0.02
(V CE =4V)
6
3
Collector-Emitter Voltage V C E (V)
100
B C E
˚C (
15
0m
Collector-Emitter Saturation Voltage V C E (s at) (V )
20
A
2.60typ
V CE ( sat ) – I B Characteristics (Typical)
6
0m
0.16typ
–0.3
Weight : Approx 2.0g
a. Type No.
b. Lot No.
tf
(µs)
tstg
(µs)
125
I C – V CE Characteristics (Typical)
ton
(µs)
IB2
(A)
Cas
e Te
mp
(Cas
e Tem )
p)
–5
10
3
IB1
(A)
Collector Current I C (A)
10
30
VBB2
(V)
VBB1
(V)
IC
(A)
2.4±0.2
2.2±0.2
θ j- a ( ˚C/W)
RL
(Ω)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
ø3.3±0.2
a
b
13.0min
IB
4.2±0.2
2.8 c0.5
4.0±0.2
IEBO
V
µA
0.8±0.2
V
6
10max
±0.2
80
VEBO
Unit
VCB=120V
)
VCEO
Conditions
Temp
ICBO
(Case
V
–30˚C
Unit
120
25˚C
2SC4511
VCBO
Symbol
External Dimensions FM20(TO220F)
(Ta=25°C)
2SC4511
3.9
Symbol
8.4±0.2
■Electrical Characteristics
16.9±0.3
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
30
20
10
nk
0.1
si
Without Heatsink
Natural Cooling
at
0.5
he
1
20
ite
Collector Curre nt I C ( A)
s
fin
10
0m
In
20
DC
ith
Typ
s
10
5
30
m
W
Cu t-off Fre quen cy f T (M H Z )
10
M aximum Power Dissipa ti on P C (W)
40
10
Without Heatsink
2
0
–0.02
–0.1
–1
Emitter Current I E (A)
110
–6
0.05
3
5
10
50
Collector-Emitter Voltage V C E (V)
100
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150