SANKEN 2SC4518A

2SC4518/4518A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
Symbol 2SC4518 2SC4518A
■Electrical Characteristics
(Ta=25°C)
Symbol
Conditions
2SC4518 2SC4518A
Unit
V
ICBO
VCB=800V
100max
µA
Unit
External Dimensions FM20(TO220F)
IEBO
V
V(BR)CEO
5(Pulse10)
A
hFE
IC
VEB=7V
100max
µA
IC=10mA
550min
V
VCE=4V, IC=1.8A
10 to 25
IB
2.5
A
VCE(sat)
IC=1.8A, IB=0.36A
0.5max
PC
35(Tc=25°C)
W
VBE(sat)
IC=1.8A, IB=0.36A
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–0.35A
6typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
50typ
pF
Tstg
3.9
V
1.35±0.15
1.35±0.15
–5
10
1.8
IB1
(A)
0.27
5
0
70
600mA
mA
400 mA
Collector Current I C (A)
4
250 mA
3
150 mA
2
I B =50mA
1
0
0
1
2
3
0.7max
–0.9
0.5max
4max
1.0
V B E (sat)
0.5
0.5
1
5
0
10
1
5
1
tf
0.5
t on
0.1
0.2
0.5
1
5
1.0
1.2
1
0.5
0.3
1
10
100
1000
Time t(ms)
P c – T a Derating
35
si
nk
Collector Curr ent I C (A)
at
0.03
50
he
Collector-Emitter Voltage V C E (V)
1000
20
10
Without Heatsink
0.05
500
ite
0.1
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
fin
Without Heatsink
Natural Cooling
0.5
In
0.5
1
ith
1
30
W
M aximum Power Dissipa ti on P C (W)
s
5
100
0.8
10
5
50
0.6
4
Reverse Bias Safe Operating Area
20
0µ
0.4
θ j-a – t Characteristics
20
10
0.2
Collector Current I C (A)
Safe Operating Area (Single Pulse)
Collect or Cur ren t I C (A)
t s tg
V C C 250V
I C :I B 1 :I B2 =1:0.15:–0.5
Collector Current I C (A)
10
0
Base-Emittor Voltage V B E (V)
Transient Thermal Resistance
–55˚C
0.05
0.03
10
2
10
7
5
t on• t s t g • t f (µ s)
25˚C
Swi tchi ng T im e
DC Cur rent Gain h F E
125˚C
0.1
3
V C E (sat)
0.1
t on •t stg • t f – I C Characteristics (Typical)
50
0.5
4
1
(V C E =4V)
0.1
(V CE =4V)
5
Collector Current I C (A)
h FE – I C Temperature Characteristics (Typical)
0.05
I C – V BE Temperature Characteristics (Typical)
I C /I B =5 Const.
Collector-Emitter Voltage V C E (V)
5
0.02
B C E
1.5
0
0.03 0.05
4
Weight : Approx 2.0g
a. Type No.
b. Lot No.
tf
(µs)
tstg
(µs)
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
I C – V CE Characteristics (Typical)
ton
(µs)
IB2
(A)
Collector Current I C (A)
139
250
VBB2
(V)
VBB1
(V)
IC
(A)
2.4±0.2
2.2±0.2
θ j - a (˚ C/W)
RL
(Ω)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
ø3.3±0.2
a
b
0.8±0.2
V
7
4.2±0.2
2.8 c0.5
8.4±0.2
550
VEBO
16.9±0.3
VCEO
13.0min
1000
4.0±0.2
10.1±0.2
900
VCBO
±0.2
■Absolute maximum ratings (Ta=25°C)
2SC4518
100
500
Collector-Emitter Voltage V C E (V)
2SC4518A
1000
2
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
113