SANKEN 2SC5130

2SC5130
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
2SC5130
Unit
VCB=500V
100max
µA
VEB=10V
10max
µA
IC=25mA
400min
ICBO
VCEO
400
V
IEBO
VEBO
10
V
V(BR)CEO
5(Pulse10)
A
hFE
VCE=4V, IC=1.5A
10 to 30
10.1±0.2
V
A
VCE(sat)
IC=1.5A, IB=0.3A
0.5max
30(Tc=25°C)
W
VBE(sat)
IC=1.5A, IB=0.3A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–0.3A
20typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
30typ
pF
Tstg
3.9
2
PC
ø3.3±0.2
a
b
V
IB
1.35±0.15
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
133
1.5
10
–5
0.15
–0.3
1max
2max
0.3max
VCE(sat)–IC Characteristics (Typical)
1
2
3
0.05 0.1
0.5
1
0
5
2
10
1
5
t s tg
1
Transient Thermal Resistance
t on• t s t g • t f (µ s)
–55˚C
Swi tchi ng T im e
0.5
t on
tf
V C C 200V
I C :I B 1 :–I B2 =10:1:2
0.1
0.1
0.5
1
3
0.5
0.4
50
)
(Case
Temp
mp)
100
1000
P c – T a Derating
ite
he
at
si
nk
Without Heatsink
Natural Cooling
L=3mH
–IB2=0.5A
Duty:less than 1%
20
fin
Without Heatsink
Natural Cooling
1
0.5
e Te
10
In
1
0.5
1
ith
5
s
1.4
30
10
µs
1. 2
W
5
0µ
Co lle ctor Cu rre nt I C ( A)
10
1.0
Time t(ms)
20
20
0.8
1
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.6
5
Collector Current I C (A)
Collector Current I C (A)
10
0.4
θ j-a – t Characteristics
Maximu m Power Dissi pation P C ( W)
DC C urrent G ain h FE
25˚C
0.5
0.2
Base-Emittor Voltage V B E (V)
t on •t stg • t f – I C Characteristics (Typical)
125˚C
0.1
0
Collector Current I C (A)
(V C E =4V)
0.05
p)
–55˚C (Case Temp)
0
0.01
4
h FE – I C Characteristics (Typical)
5
0.01
em
1
Collector-Emitter Voltage V C E (V)
50
eT
25˚C (Case Temp)
θ j - a (˚ C/W)
0
2
–55˚C
I B =50mA
1
125˚C (Case Temp)
0.5
3
(Cas
2
1.0
Cas
15 0m A
4
˚C (
30 0m A
3
I C / I B =5 Const.
25˚C
50 0m A
5
1.5
125
mA
4
Collector Current I C (A)
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (s at) (V )
800
Collecto r Cur ren t I C (A)
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B C E
(V C E =4V)
5
0
2.4±0.2
2.2±0.2
VCC
(V)
I C – V CE Characteristics (Typical)
4.2±0.2
2.8 c0.5
4.0±0.2
V
0.8±0.2
Unit
600
±0.2
Conditions
2SC5130
VCBO
IC
External Dimensions FM20(TO220F)
8.4±0.2
Symbol
Application : Switching Regulator and General Purpose
(Ta=25°C)
16.9±0.3
Symbol
■Electrical Characteristics
13.0min
■Absolute maximum ratings (Ta=25°C)
10
Without Heatsink
2
0.1
5
10
50
100
Collector-Emitter Voltage V C E (V)
500
0.1
5
10
50
100
Collector-Emitter Voltage V C E (V)
500
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
129