2SC5271 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE1 IC VCB=300V 100max µA VEB=7V 100max µA IC=10mA 200min V VCE=2V, IC=2.5A 10 to 30 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A 1.0max Tj 150 °C VBE(sat) IC=2.5A, IB=0.5A 1.5max V –55 to +150 °C fT VCE=12V, IE=–0.5A 10typ MHz COB VCB=10V, f=1MHz 45typ pF Tstg 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b V 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 150 60 2.5 10 –5 0.5 –1.0 0.3max 1.0max 0.1max 132 10.1±0.2 4.0±0.2 ICBO External Dimensions FM20(TO220F) 0.8±0.2 V Unit ±0.2 300 2SC5271 3.9 VCBO (Ta=25°C) Conditions 8.4±0.2 Symbol Unit 16.9±0.3 ■Electrical Characteristics 2SC5271 Symbol 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Resonant Switching Regulator and General Purpose B C E Weight : Approx 2.0g a. Type No. b. Lot No.