2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V(BR)CEO IC 12 A 2SC5370 Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–3A 90typ MHz °C COB VCB=10V, f=1MHz 120typ pF Tstg –55to+150 ∗hFE Rank O(70 to 140), Y(120 to 240), G(200 to 400) 10.1±0.2 4.0±0.2 VCEO Symbol 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b 0.8±0.2 ICBO V ±0.2 V 3.9 Unit 60 External Dimensions FM20(TO220F) 8.4±0.2 2SC5370 VCBO Symbol (Ta=25°C) 16.9±0.3 ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Emergency Lighting Inverter and General Purpose 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 B C E Weight : Approx 2.0g a. Type No. b. Lot No. 135