SANKEN 2SD2016

2SD2016
Silicon NPN Triple Diffused Planar Transistor
VCEO
200
V
IEBO
VEBO
6
V
V(BR)CEO
IC
3
A
hFE
Symbol
Conditions
VCB=200V
10max
µA
10max
mA
VEB=6V
V
200min
IC=10mA
1000 to 15000
VCE=4V, IC=1A
0.5
A
VCE(sat)
IC=1A, IB=1.5mA
1.5max
PC
25(Tc=25°C)
W
VBE(sat)
IC=1A, IB=1.5mA
2.0max
V
°C
fT
VCE=12V, IE=–0.1A
90typ
MHz
°C
COB
VCB=10V, f=1MHz
40typ
pF
150
Tstg
–55 to +150
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
V
IB
Tj
10.1±0.2
4.0±0.2
ICBO
0.8±0.2
V
±0.2
Unit
200
Unit
3.9
2SD2016
External Dimensions FM20(TO220F)
(Ta=25°C)
2SD2016
8.4±0.2
■Electrical Characteristics
VCBO
Symbol
(2kΩ) (200Ω) E
Application : Igniter, Relay and General Purpose
16.9±0.3
■Absolute maximum ratings (Ta=25°C)
B
13.0min
Darlington
C
Equivalent
circuit
1.35±0.15
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B C E
V CE ( sat ) – I B Characteristics (Typical)
0
1
0
2
3
4
0
0.2
1
Collector-Emitter Voltage V C E (V)
(V C E =4V)
10000
DC Curr ent Gain h F E
1000
500
125
˚C
Transient Thermal Resistance
5000
5000
C
1000
25˚
500
˚C
–55
100
50
100
0.5
1
3
10
0.03
0.1
0.5
f T – I E Characteristics (Typical)
p)
mp)
2
1
3
5
1
0.5
1
5
10
50
100
500 1000
Time t(ms)
Collector Current I C (A)
Collector Current I C (A)
ase Tem
1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
10000
0.1
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
30
Ma xim um Powe r Dissipat io n P C (W)
80
Cut- off F req uency f T ( MH Z )
DC Cur rent Gain h FE
0
3
Base Current I B (mA)
h FE – I C Characteristics (Typical)
50
0.03
1
12 5˚C
–55˚C (C
25˚C
e Te
–5 5˚C
1
(Cas
1
p)
A
25˚C
.3m
2
Tem
I B= 0
2
se
A
(Ca
0.5m
2
(V CE =4V)
3
3
˚C
1mA
125
1.5
mA
θ j - a ( ˚ C/W)
Collector Current I C (A)
3m
A
Collector-Emitter Saturation Voltage V C E (s at) (V )
3
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
I C – V CE Characteristics (Typical)
60
40
20
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
W
ith
In
150x150x2
1 00x 1 0
10
0x
2
fin
ite
he
at
si
nk
50x50x2
Without Heatsink
2
0
–0.01
–0.05
–0.1
–0.5
Emitter Current I E (A)
–1
–3
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
141