Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559) V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max 19.9±0.3 2SD2389 a 4.8±0.2 2.0±0.1 ø3.2±0.1 b V IB 1 A VCE(sat) PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=6mA 3.0max V Tj 150 °C fT VCE=12V, IE=–1A 80typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF Tstg 15.6±0.4 9.6 1.8 160 E External Dimensions MT-100(TO3P) (Ta=25°C) Conditions 5.0±0.2 VCBO Symbol 2.0 Unit 4.0 ■Electrical Characteristics (Ta=25°C) 2SD2389 Symbol 2 4.0max ■Absolute maximum ratings (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 60 10 6 10 –5 6 –6 0.6typ 10.0typ 0.9typ 0 0 2 4 0 6 0.2 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 0 100 200 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 40000 50000 Typ 10000 5000 Transient Thermal Resistance DC C urrent G ain h FE DC C urrent G ain h FE 125˚C 25˚C 10000 5000 –30˚C 1000 0.5 0 1 5 500 0.2 8 0.5 Collector Current I C (A) e Te (Cas 2 1 5 θ j-a – t Characteristics 4 1 0.5 0.2 8 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) mp) mp) 1 Base-Emittor Voltage V B E (V) (V C E =4V) 1000 02 2 Base Current I B (mA) h FE – I C Characteristics (Typical) e Te I C =4A 1 4 (Cas I B =0.3mA I C =6A –30˚C 2 I C =8A mp) 0.5mA 6 25˚C 4 2 e Te 0.8 mA Cas 1.0m A 6 (V CE =4V) 8 3 ˚C ( 1. 3m A 125 A Collector Current I C (A) 1.5m 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚ C/W) 5m 2. A 0m A 1. C Weight : Approx 2.0g a. Type No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) A 8m Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) 8 2. 10mA I C – V CE Characteristics (Typical) 5.45±0.1 B Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 80 20 10 Typ s 5 40 at si nk Collect or Cur ren t I C (A) he Without Heatsink Natural Cooling ite 0.1 20 fin 0.5 In 40 1 60 ith 60 C W D 80 s 0m 100 Cut- off F req uenc y f T (MH Z ) m M aximum Power Dissipa ti on P C (W) 10 10 20 0.05 0 –0.02 –0.1 –1 Emitter Current I E (A) 148 –8 0.03 3 Without Heatsink 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150