Equivalent circuit 2SD2494 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625) 110 V ICBO VCEO 110 V IEBO VEBO 5 V V(BR)CEO IC 6 (Ta=25°C) Conditions 2SD2494 Unit VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ 15.6±0.2 A VCE(sat) IC=5A, IB=5mA 2.5max 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A 60typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF 3.3 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ 1.75 0.8 2.15 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 0.65 +0.2 -0.1 5.45±0.1 1.5 4.4 B V CE ( sat ) – I B Characteristics (Typical) 3.35 1.5 C Weight : Approx 6.5g a. Type No. b. Lot No. E I C – V BE Temperature Characteristics (Typical) I B =0.1mA 0 0 2 4 I C =3A 0 6 0.5 0.1 Collector-Emitter Voltage V C E (V) 1 5 10 50 (V C E =4V) DC Cur rent Gain h F E Typ 10000 5000 1000 500 1 10000 Transient Thermal Resistance 40000 125˚C 5000 25˚C 1000 –30˚C 500 100 0.02 5 6 0.1 0.5 f T – I E Characteristics (Typical) ) Temp e Tem p) mp) 2 2.5 1 5 1 0.5 1 56 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 60 20 Typ Co lle ctor Cu rren t I C (A) nk 154 –6 si –1 Emitter Current I E (A) at –0.1 0.05 3 he 0 –0.02 ite 0.1 fin Without Heatsink Natural Cooling 40 In 0.5 ith s 1 W 0m s 20 C 10 40 D m 5 60 M aximu m Power Dissipa tion P C (W) 10 10 Cu t-of f Fr eque ncy f T (MH Z ) DC C urrent G ain h FE 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 40000 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 200 0.02 2 (Case 1 –30˚C 2 I C =5A 4 e Te 0.2mA 2 (Cas 4 25˚C Collector Current I C (A) 0.3 mA (V CE =4V) 6 3 Cas 0. 4m A ˚C ( A 125 5m Collector Current I C (A) 0. θ j - a (˚ C/W) 5mA 6 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 1m A I C – V CE Characteristics (Typical) 3.45 ±0.2 3.0 1 PC 5.5±0.2 ø3.3±0.2 a b V IB Tstg External Dimensions FM100(TO3PF) 0.8±0.2 VCBO Symbol 5.5 Unit 1.6 ■Electrical Characteristics 2SD2494 23.0±0.3 Symbol E Application : Audio, Series Regulator and General Purpose 9.5±0.2 ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) 16.2 Darlington C B 20 Without Heatsink 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150