SANKEN 2SD2589

2SD2589
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659)
VCB=110V
100max
µA
V
IEBO
VEB=5V
100max
µA
5
V
V(BR)CEO
IC=30mA
110min
V
6
A
hFE
VCE=4V, IC=5A
5000min∗
IB
1
A
VCE(sat)
IC=5A, IB=5mA
2.5max
PC
50(Tc=25°C)
W
VBE(sat)
IC=5A, IB=5mA
3.0max
V
Tj
150
°C
fT
VCE=12V, IE=–0.5A
60typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
110
V
VCEO
110
VEBO
IC
Tstg
10.2±0.2
V
pF
55typ
2.0±0.1
ø3.75±0.2
a
b
1.35
0.65 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
2.5
■Typical Switching Characteristics (Common Emitter)
2.5
1.4
B C E
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
30
6
5
10
–5
5
–5
0.8typ
6.2typ
1.1typ
I C – V CE Characteristics (Typical)
4.8±0.2
3.0±0.2
ICBO
VCBO
16.0±0.7
Unit
Symbol
External Dimensions FM-25(TO220)
(Ta=25°C)
2SD2589
Unit
8.8±0.2
■Electrical Characteristics
Conditions
2SD2589
Symbol
4.0max
■Absolute maximum ratings (Ta=25°C)
Application : Audio, Series Regulator and General Purpose
12.0min
Darlington
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I C – V BE Temperature Characteristics (Typical)
A
V CE ( sa t ) – I B Characteristics (Typical)
I B =0.1mA
0
0
2
4
I C =3A
0
6
0.1
0.5
1
5
10
50
h FE – I C Characteristics (Typical)
(VCE=4V)
40000
10000
5000
1000
500
1
5 6
Collector Current I C (A)
10000
12
5000
Transient Thermal Resistance
DC C urrent G ain h FE
Typ
5˚C
25
˚C
–3
0˚C
1000
500
100
0.02
0.1
0.5
)
Temp
Temp
)
mp)
e Te
2
2.5
1
56
5
1
0.5
0.4
1
10
Collector Current I C (A)
f T – I E Characteristics (Typical)
100
1000 2000
Time t(ms)
P c – T a Derating
Safe Operating Area (Single Pulse)
(VCE=12V)
50
80
60
at
si
nk
Emitter Current I E (A)
–6
he
–1
30
ite
–0.1
fin
0
–0.02
In
20
ith
40
40
W
Maxim um Power Dissip ation P C (W)
Typ
Cut- off F req uency f T (MH Z )
DC Cur r ent Gai n h F E
1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
40000
0.5
0
Base-Emittor Voltage V B E (V)
(VCE=4V)
0.1
0
100
Base Current I B (mA)
Collector-Emitter Voltage V C E (V)
200
0.02
2
(Case
1
–30˚C
2
I C =5A
4
(Case
0.2mA
2
(Cas
4
25˚C
Collector Current I C (A)
0.3 mA
(VCE=4V)
6
125˚C
0. 4m A
Collector Current I C (A)
mA
3
θ j - a (˚C /W)
5
0.
Collector-Emitter Saturation Voltage V C E (s at) (V)
1m
5mA
6
20
10
2
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
161