SUM23N15-73 Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 150 ID (A) 0.073 @ VGS = 10 V 23 0.077 @ VGS = 6 V 22.5 TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized APPLICATIONS D Primary Side Switch D TO-263 G G D S Top View S Ordering Information: SUM23N15-73 N-Channel MOSFET SUM23N15-73 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_Cc Operating Junction and Storage Temperature Range ID V 23 13.4 IDM 35 IAR 25 EAR Unit 31 A mJ 100b PD 3.75 W TJ, Tstg - 55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) RthJA 40 RthJC 1.5 _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72143 S-03535—Rev. A, 24-Mar-03 www.vishay.com 1 SUM23N15-73 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 150 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 120 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) V VDS = 120 V, VGS = 0 V, TJ = 125_C 50 VDS = 120 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 35 VGS = 10 V, ID = 15 A Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) Forward gfs mA m 0.073 VGS = 10 V, ID = 15 A, TJ = 125_C 0.140 VGS = 10 V, ID = 15 A, TJ = 175_C 0.168 VDS = 15 V, ID = 25 A nA A 0.059 VGS = 6 V, ID = 10 A Transconductancea 4 0.062 W 0.077 10 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 70 Total Gate Chargec Qg 22 Gate-Source Chargec Qgs 1290 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 75 V,, VGS = 10 V,, ID = 23 A 160 pF 35 6 nC Gate-Drain Chargec Qgd 7.5 Gate Resistance RG 4.0 td(on) 10 15 tr 60 90 30 43 45 70 Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec td(off) VDD = 75 V, RL = 3.26 W ID ^ 23 A, VGEN = 10 V, RG = 2.5 W tf W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 35 Pulsed Current ISM 23 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 23 A, VGS = 0 V trr IRM(REC) Qrr IF = 23 A, di/dt = 100 A/ms A 1.0 1.5 V 100 150 ns 5 8 A 0.25 0.6 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72143 S-03535—Rev. A, 24-Mar-03 SUM23N15-73 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 35 35 VGS = 10 thru 6 V 30 I D - Drain Current (A) I D - Drain Current (A) 28 25 20 15 10 5V 21 14 TC = 125_C 7 5 25_C - 55_C 4V 0 0 3 6 9 0 12 0 15 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 50 0.12 TC = - 55_C r DS(on) - On-Resistance ( W ) g fs - Transconductance (S) 40 25_C 30 125_C 20 10 0 0.09 VGS = 6 V 0.06 VGS = 10 V 0.03 0.00 0 5 10 15 20 25 0 30 5 10 ID - Drain Current (A) 20 25 30 35 ID - Drain Current (A) Capacitance Gate Charge 20 V GS - Gate-to-Source Voltage (V) 2000 1600 C - Capacitance (pF) 15 Ciss 1200 800 400 Crss Coss 0 VDS = 75 V ID = 23 A 16 12 8 4 0 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Document Number: 72143 S-03535—Rev. A, 24-Mar-03 150 0 8 16 24 32 40 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM23N15-73 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.7 VGS = 10 V ID = 15 A 2.1 I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) 2.4 100 1.8 1.5 1.2 0.9 0.6 TJ = 150_C TJ = 25_C 10 0.3 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 190 V(BR)DSS (V) 180 ID = 1.0 mA 170 160 150 140 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72143 S-03535—Rev. A, 24-Mar-03 SUM23N15-73 Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 100 25 Limited by rDS(on) 10 ms 100 ms I D - Drain Current (A) I D - Drain Current (A) 20 15 10 10 1 ms 10 ms 1 100 ms dc TC = 25_C Single Pulse 5 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 72143 S-03535—Rev. A, 24-Mar-03 www.vishay.com 5