LL103A THRU LL103C Schottky Diodes FEATURES MiniMELF ♦ For general purpose applications. ♦ The LL103A, B, C is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. .142 (3.6) .134 (3.4) ♦ The low forward voltage drop and fast switch- ∅ .063 (1.6) .055 (1.4) Cathode Mark ing make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. .019 (0.48) .011 (0.28) ♦ This diode is also available in DO-35 case with the type designation SD103A, B, C, and in the SOD-123 case with type designation SD103AW, SD103BW, SD103CW. Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case SOD-80C Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit VRRM VRRM VRRM 40 30 20 V V V Power Dissipation (Infinite Heatsink) TC = 3/8″ from Body derates at 4 mW/°C to 0 at 125 °C Ptot 4001) mW Junction Temperature Tj 125 °C Storage Temperature Range TS –55 to +150 °C Single Cycle Surge 60-Hz Sine Wave IFSM 15 A Peak Inverse Voltage 1) LL103A LL103B LL103C Valid provided that electrodes are kept at ambient temperature. 4/98 LL103A THRU LL103C ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit IR IR IR – – – – – – 5 5 5 µA µA µA VF VF – – – – 0.37 0.6 V V Junction Capacitance at VR = 0 V, f = 1 MHz Ctot – 50 – pF Reverse Recovery Time at IF = IR = 50 mA to 200 mA, recover to 0.1 IR trr – 10 – ns Leakage Current at VR = 30 V at VR = 20 V at VR = 10 V LL103A LL103B LL103C Forward Voltage Drop at IF = 20 mA at IF = 200 mA RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C