SANKEN SMA5102

SMA5102
Absolute maximum ratings
N-channel
With built-in flywheel diode
Electrical characteristics
(Ta=25°C)
Symbol
Ratings
Uni
Symbol
VDSS
VGSS
ID
100
±20
±4
±8 (PW≤1ms)
16
4 (PW≤0.5ms, Du≤25%)
8 (PW≤10ms, Single pulse)
120
V
V
A
A
mJ
A
A
V
W
W
°C/W
°C/W
°C
°C
V(BR)DSS
IGSS
IDSS
VTH
Re(yfs)
RDS(ON)
Ciss
Coss
ton
toff
VSD
trr
ID(pulse)
EAS*
IF
IFSM
VR
PT
θ j–a
θ j–c
Tch
Tstg
4 (Ta=25°C, with all circuits operating, without heatsink)
28 (Tc=25°C,with all circuits operating, with infinite heatsink)
31.2 (Junction-Air, Ta=25°C, with all circuits operating)
4.46 (Junction-Case, Tc=25°C, with all circuits operating)
150
–40 to +150
1
3
4
5
9
10
8
•••
SMA
(Ta=25°C)
Specification
min
typ
max
100
±500
250
2.0
4.0
1.1
1.7
0.50
0.60
180
82
40
40
1.2
2.0
250
Unit
Conditions
V
nA
µA
V
S
Ω
pF
pF
ns
ns
V
ns
ID=250µA, VGS=0V
VGS=±20V
VDS=100V, VGS=0V
VDS=10V, ID=250µA
VDS=10V, ID=4A
VGS=10V, ID=4A
VDS=25V, f=1.0MHz,
VGS=0V
ID=4A, VDD 50V, VGS=10V,
see Fig. 3 on page 16.
ISD=4A, VGS=0V
ISD=±100mA
●Diode for flyback voltage absorption
* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.
2
External dimensions B
Symbol
VR
VF
IR
trr
11
Specification
typ
max
min
120
1.0
1.2
10
100
Unit
Conditions
V
V
µA
ns
IR=10µA
IF=1A
VR=120V
IF=±100mA
12
6
7
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
TC=–40°C
10V
7
(VDS=10V)
0.8
8
7
6
25°C
125°C
6V
3
(ON)
4
0.6
5
4
RDS
ID (A)
5
(Ω)
6
7V
ID (A)
RDS(ON)-ID Characteristics (Typical)
(VDS=10V)
8
0.4
3
2
0.2
2
VGS=5V
1
1
0
0
10
0
20
0
2
4
VDS (V)
6
8
0
10
0
1
2
3
4
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
(VDS=10V)
6
Capacitance (pF)
(Ω)
Ciss
0.8
(ON)
RDS
Re (yfs) (S)
TC=–40°C
25°C
0.5
0.6
0.4
125°C
100
0.5
0.1
5
1
Crss
10
5
0
–40
8
0
50
ID (A)
10
20
0µ
ED
IT
(1
LI
s
M
m
ite
sin
at
He
N)
(O
RD
S
PT (W)
15
fin
0.5
In
1
ith
W
t)
ID (A)
20
o
sh
3
s
1m
10
4
With Silicone Grease
Natural Cooling
All Circuits Operating
25
s
5
5
50
30
10
ID (pulse) max
6
40
PT-Ta Characteristics
(TC=25°C)
10
7
30
VDS (V)
Safe Operating Area (SOA)
8
IDR (A)
0
150
100
TC (°C)
IDR-VSD Characteristics (Typical)
10
k
2
Coss
50
0.2
0.2
0.05
8
VGS=0V
f=1MHz
600
1.0
1
7
Capacitance-VDS Characteristics (Typical)
ID=4A
VGS =10V
1.2
5
5
ID (A)
VGS (V)
10V
VGS=0V
5 Without Heatsink
1
5V
0
0
0.5
1.0
VSD (V)
98
1.5
0.1
0.5
1
5
10
VDS (V)
50
100
0
0
50
100
Ta (°C)
150