1.2A 3 circuits Triac Array STA203A ■ Features External Dimensions (Unit: mm) 11.3±0.2 ●RMS on-state current: IT(RMS)=1.2A ) a b 4.7±0.5 1.0±0.25 0.5±0.15 2.54 7✕ 2.54=17.78 ±0.25 C1.5±0.5 1 2 T1 G 3 4 T2 G 5 6 T2 G 7 0.5±0.15 1.2±0.2 ●Gate trigger current: IGT=3mA max (MODE , , 2.3±0.2 ●Repetitive peak off-state voltage: VDRM=400V 4.0±0.2 20.2±0.2 9.0±0.2 ●1.2A 3 Triacs combined one package 8 3 5 TR1 7 TR2 2 4 TR3 6 8 1 T2 T1 a. Part Number b. Lot Number Weight: Approx. 2.1g ■Absolute Maximum Ratings Parameter Symbol Ratings Unit Repetitive peak off-state voltage VDRM 400 V RMS on-state current IT(RMS) 1.2 A Conduction angle 360°, Tc=97°C Surge on-state current ITSM 10 A 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C Peak gate voltage VGM 6 V Peak gate current IGM 0.5 A W PGM 1 PG(AV) 0.1 W Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Peak gate power loss Average gate power loss Conditions ■Electrical Characteristics Parameter Symbol Off-state current IDRM On-state voltage VTM (Tj=25°C, unless otherwise specified) Ratings min typ max 0.1 1.0 0.1 1.6 2.0 Gate trigger voltage 0.7 VGT 0.8 Unit mA V Conditions VD=VDRM, RGK=∞, Tj=125°C VD=VDRM, RGK=∞, Tj=25°C Pulse test, ITM=1.6A + 1.2 1.2 V VD=6V, RL=10Ω, TC=25°C Gate trigger current 1.8 IGT 2.3 Holding current Thermal resistance 62 VGD IH Rth – – – – + + + T2 , G T2 , G T2 , G 3.0 3.0 3.0 mA VD=6V, RL=10Ω, TC=25°C + – – – – + T2 , G T2 , G T2 , G 13.0 Gate non-trigger voltage + T2 , G 2.0 2.0 + T2 , G 3.5 V 0.1 5.0 20.0 mA °C/W VD=1/2×VDRM, Tj=125°C VD=6V Junction to case STA203A 5 Tj=125°C 50Hz 10 6 4 5 2.0 3.0 1 5 10 50 0 100 IT(RMS) – Tc Ratings 1.0 ( TR1, TR2 or TR2, TR3 Ambient temperature Ta (°C) Case temperature TC (°C) θ2 ) 100 2 elements operation ( TR 2, TR 3) 3 elements operation 75 50 Full-cycle sinewave Conduction angle θ=θ1+ θ2 =360° 25 θ2 1.0 1.5 0 RMS on-state current IT(RMS) (A) TR , TR or ( TR ) , TR 1 2 50 25 –20°C 25°C 75°C 125°C 100 1000 2 elements operation ) –20°C 25°C 1.0 75°C 125°C 10 100 1000 10 100 Pulse width Tj= – 40°C 1000 t w (µs) –20°C 25°C 1.0 75°C 125°C 0.5 0.5 1 10 100 1000 (MODE – ) tw 30 igt tw 10 ( 10 Tj= – 40°C trigger current igt (Gate ) at Tj and tw 125°C 0.1 0.5 1 1.5 Pulse width tw (µs) igt ) 75°C vgt tw ( Tj= – 40°C 0.5 0.5 1 2.0 gate trigger VGT DC voltage at 25°C 1.5 ( 25°C ( i trigger current igt (Gate ) at Tj and tw –20°C 1.5 igt (Typical) gate trigger IGT DC current at 25°C ) ( ) Tj= – 40°C 1.0 (MODE – ) vgt 30 tw 10 0.5 RMS on-state current IT(RMS) (A) Pulse width tw (µs) igt 1 0 1.5 (MODE – ) 30 gate trigger IGT DC current at 25°C 1.0 tw (MODE – ) gt Gate trigger current at Tj and tw 0.5 2.0 Pulse width tw (µs) Pulse trigger temperature Characteristics 2 3 ( TR 2, TR 3) trigger voltage vgt ( Gate ) at Tj and tw Tj= – 40°C trigger voltage vgt ( Gate ) at Tj and tw ) v ) ( 1.5 ( gt Gate trigger voltage at Tj and tw gate trigger VGT DC voltage at 25°C tw ) ( gate trigger VGT DC voltage at 25°C vgt 10 Tj= –40°C 1 element operation 2 elements operation 75 3 elements operation (MODE – ) 2.0 0.5 0.5 1 Tj= –20°C Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling vgt (Typical) (MODE – ) 1.0 1.5 100 RMS on-state current IT(RMS) (A) Pulse trigger temperature Characteristics 1.0 iGF (A) 0 ) 0.5 0 gate trigger IGT DC current at 25°C 0 0.5 125 θ1 0 12 150 1 element operation 2 elements operation 125 θ1 8 IT(RMS) – Ta Ratings 150 2.0 4 Gate trigger current IGT (mA) Gate current Number of cycle Full-cycle sinewave Conduction angle θ=θ1+ θ2 =360° 0 See graph at the upper right 3.6 3.0 0 0 vT ( V ) IT(RMS) – PT(AV) Characteristics 2 2 0 On-state voltage Tj=25°C vGF (V) 8 4 W =1 0.5 1.0 10 ms 1cycle Gate voltage Tj=25°C 10 M Surge on-state current ITSM (A) iT (A) 10 Initial junction temperature Tj=125°C ITSM PG On-state current 15 12 1 Average on-state power PT(AV) (W) Gate Characteristics ITSM Ratings 50 Gate trigger voltage VGT (V) vT – iT Characteristics (max) –20°C 25°C 1 75°C 125°C 0.1 0.5 1 10 Pulse width 100 t w (µs) 1000 Tj= – 40°C –20°C 1 25°C 75°C 125°C 0.1 0.5 1 10 Pulse width 100 1000 t w (µs) Transient thermal resistance Characteristics Transient thermal resistance rth (°C/W) 200 1 element operation 100 Junction to operating environment Junction to T2 Lead 10 1 1 10 10 2 10 3 10 4 10 5 t, Time (ms) 63