Power Transistor Array STA415A L = 10mH, single pulse ±0.2 9.0 ±0.2 ±0.2 V V V Ω kΩ mJ b a 1.0 ±0.25 9 • 2.54=22.86 C1.5 30m A IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) 0 ton (µs) 1.0 tstg (µs) 8.5 A m 0 ±0.3 ±0.05 ±0.5 tf (µs) 2.5 a) Type No. b) Lot No. (Unit: mm) ■ VCE (sat) — IC Temperature Characteristics (IC = 0.5A) 0.5 3 IC /IB = 100 8mA 12 ±0.3 1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E ■ VCE (sat) — IB Temperature Characteristics ■ IC — VCE Characteristics (typ.) 3 RL (Ω) 12 (2.54) ±0.15 0 Typical Switching Characteristics VCC (V) 12 0.5 ±0.2± 25% ±0.2 25.25 ±0.2 VFEC RB RBE Es/b External Dimensions STA4 (LF412) 4.0 VCE (sat) (Ta=25ºC) Unit µA mA V 2.3 ICBO IEBO VCEO hFE Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800±120 2.0±0.4 50min ±0.15 * PW 1ms, Duty Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A 1.2 Tj Tstg Symbol 0.5 PT Unit V V V A mA W W ºC ºC 11.3 Ratings 35±5 36±5 6 2 (pulse 3*) 30 4 (Ta = 25ºC) 18 (Tc = 25ºC) 150 –55 to +150 ±0.5 Symbol VCBO VCEO VEBO IC IB 3.5 Electrical Characteristics Absolute Maximum Ratings (Ta=25ºC) 5mA IC (A) 3mA 2mA 1 IB = 1mA 2 3 4 5 1 6 10 100 0.5 1 500 Ta = 125ºC 75ºC 25ºC –40ºC 100 1 j-a — t VCC = 12V IB = 5mA –IB = 0A tstg Single pulse 5 tf ton 1 0.5 4 Characteristics 20 10 0.1 0.5 ■ 50 ton • tstg• tf (µS) 1000 10 5 1 0 0.5 1.0 1.5 2.0 1 10 100 Ic (A) IC (A) (per element) 5 1000 t (ms) ■ PT — Ta Derating ■ Safe Operating Area (single pulse) 5 IC (A) ■ ton•tstg•tf — IC Characteristics (typ.) (VCE = 4V) 3000 0.1 0 IB (mA) ■ hFE — IC Temperature Characteristics 50 0.01 0 400 (ºC/W) 1 VCE (V) hFE 1 0 0 Ta = 125ºC 75ºC 25ºC –40ºC j-a 0 Ta = 125ºC 75ºC 25ºC –40ºC 0.25 2 VCE (sat) (V) VCE (sat) (V) 2 Equivalent Circuit Diagram 20 1m s 10 m s W 5 7 9 ite he 10 at si nk PT (W) fin 0.5 3 in IC (A) ith 1 2 RB 4 6 8 RBE 1 Without heatsink natural air cooling With out h 0.1 1 5 10 VCE (V) 64 50 0 0 eatsin k 50 100 Ta (ºC) 150 10