PD - 9.1606A
IRF7319
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
S1
G1
S2
G2
N -C H A N N E L M O S F E T
1
8
2
7
3
6
4
5
D1
D1
N-Ch
P-Ch
30V
-30V
V DSS
D2
D2
RDS(on) 0.029Ω 0.058Ω
P -C H A N N E L M O S FE T
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
V DS
VGS
Continuous Drain Current
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
ID
IDM
IS
Maximum
P-Channel
N-Channel
30
6.5
5.2
30
2.5
-4.9
-3.9
-30
-2.5
2.0
1.3
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
-30
± 20
82
4.0
Units
V
A
W
140
-2.8
0.20
mJ
A
mJ
V/ ns
5.0
-5.0
-55 to + 150 °C
Symbol
Limit
Units
RθJA
62.5
°C/W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
9/15/97
IRF7319
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Min.
30
-30
—
—
—
—
—
—
1.0
-1.0
—
—
—
—
—
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ. Max.
—
—
—
—
0.022 —
0.022 —
0.023 0.029
0.032 0.046
0.042 0.058
0.076 0.098
—
—
—
—
14
—
7.7 —
— 1.0
— -1.0
—
25
— -25
— ±100
22
33
23
34
2.6 3.9
3.8 5.7
6.4 9.6
5.9 8.9
8.1 12
13
19
8.9 13
13
20
26
39
34
51
17
26
32
48
650 —
710 —
320 —
380 —
130 —
180 —
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
VGS = 0V, I D = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.7A
VGS = -10V, ID = -4.9A
VGS = -4.5V, ID = -3.6A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 5.8A
VDS = -15V, ID = -4.9A
VDS = 24V, V GS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
VDS = -24V, VGS = 0V, TJ = 55°C
VGS = ±20V
N-Channel
ID = 5.8A, VDS = 15V, VGS = 10V
nC
P-Channel
ID = -4.9A, VDS = -15V, VGS = -10V
N-Channel
VDD = 15V, ID = 1.0A, RG = 6.0Ω,
RD = 15Ω
ns
P-Channel
VDD = -15V, I D = -1.0A, RG = 6.0Ω,
RD = 15Ω
N-Channel
V GS = 0V, VDS = 25V, ƒ = 1.0MHz
pF
P-Channel
V GS = 0V, VDS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 2.5
—
— -2.5
A
—
—
30
—
— -30
— 0.78 1.0
T J = 25°C, IS = 1.7A, VGS = 0V
V
— -0.78 -1.0
TJ = 25°C, IS = -1.7A, VGS = 0V
—
45
68
N-Channel
ns
—
44
66
T J = 25°C, IF =1.7A, di/dt = 100A/µs
—
58
87
P-Channel
nC
—
42
63
T J = 25°C, IF = -1.7A, di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 22 )
Surface mounted on FR-4 board, t ≤ 10sec.
N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V (BR)DSS, TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A.
IRF7319
N-Channel
I D , Drain-to-Source Current (A)
TOP
BOTTOM
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
TOP
I D, Drain-to-Source Current (A)
100
10
3.0V
20µs PULSE WIDTH
TJ = 25°C
1
0.1
1
A
BOTTOM
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
1
10
0.1
V DS , Drain-to-Source Voltage (V)
1
A
10
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
I S D , Reverse Drain Current (A)
100
I D , Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
TJ = 25°C
T J = 150°C
10
V D S = 10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
V G S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
5.0
A
TJ = 150°C
10
TJ = 25°C
VG S = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
V S D , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
A
1.6
IRF7319
RDS (on) , Drain-to-Source On Resistance (Ω)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
N-Channel
ID = 5.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
0.040
V G S = 4.5V
0.036
0.032
0.028
0.024
V G S = 10V
0.020
80 100 120 140 160
0
10
TJ , Junction Temperature ( ° C)
30
200
TOP
E A S , Single Pulse Avalanche Energy (mJ)
0.10
0.08
0.06
I D = 5.8A
0.04
0.02
0.00
A
3
6
9
12
V G S , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
A
Fig 6. Typical On-Resistance Vs. Drain
Current
0.12
0
40
I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
RDS (on) , Drain-to-Source On Resistance (Ω)
20
15
BOTTOM
160
I ID
1.8A
3.2A
4.0A
120
80
40
A
0
25
50
75
100
125
Starting T ,JJunction Temperature (°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
150
IRF7319
N-Channel
20
V GS
C is s
C rs s
C os s
900
=
=
=
=
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
VGS , Gate-to-Source Voltage (V)
C , C a p a c ita n c e (p F )
1200
C is s
C os s
600
C rss
300
0
A
1
10
100
ID = 5.8A
VDS = 15V
16
12
8
4
0
0
10
20
30
40
Q G, Total Gate Charge (nC)
V D S , Drain-to-Source V oltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7319
-I D , Drain-to-Source Current (A)
TOP
BOTTOM -
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
TOP
-I D , Drain-to-Source Current (A)
100
P-Channel
10
-3.0V
20µs PULSE WIDTH
TJ = 25°C
1
0.1
1
A
BOTTOM -
10
-3.0V
20µs PULSE WIDTH
TJ = 150°C
1
0.1
10
1
A
10
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
100
-I S D , Reverse Drain Current (A)
100
-I D , Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
T J = 25°C
TJ = 150°C
10
V D S = -10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
-VG S , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
6.0
A
TJ = 150°C
10
TJ = 25°C
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
-VS D , Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode
Forward Voltage
A
1.4
IRF7319
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS(on) , Drain-to-Source On Resistance ( Ω )
P-Channel
I D = 4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
0.6
0.5
0.4
0.3
0.1
V G S = -10V
0.0
80 100 120 140 160
0
TJ , Junction Temperature ( ° C)
10
20
Fig 17. Typical On-Resistance Vs. Drain
Current
0.16
0.12
I D = -4.9A
0.04
0.00
0
3
6
9
12
-VGS , Gate -to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
15
A
EAS , Single Pulse Avalanche Energy (mJ)
300
0.08
30
-ID , Drain Current (A)
Fig 16. Normalized On-Resistance
Vs. Temperature
RDS(on) , Drain-to-Source On Resistance ( Ω )
V G S = -4.5V
0.2
ID
-1.3A
-2.2A
BOTTOM -2.8A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting T J, Junction Temperature ( °C)
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
150
A
IRF7319
VGS = 0V
f = 1 MHz
Ciss = Cgs + Cgd + Cds
Crss = Cgd
Coss = Cds + Cgd
1200
C, Capacitance (pF)
1000
20
C iss
800
C oss
600
400
C rss
200
0
1
ID = -4.9A
SHORTED
-V GS , Gate-to-Source Voltage (V)
1400
P-Channel
10
100
A
VDS =-15V
16
12
8
4
0
0
10
20
30
40
Q G , Total Gate Charge (nC)
- V D S , Drain-to-Source Voltage (V)
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7319
Package Outline
SO8 Outline
INCHES
DIM
D
-B-
5
8
7
1
2
6
5
3
0.25 (.010)
4
e
6X
M
A M
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
e
K x 45°
e1
e1
θ
A
-C-
0.10 (.004)
L
8X
A1
B 8X
0.25 (.010)
MAX
5
H
E
-A-
6
C
8X
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
.2284
.2440
5.80
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
8°
0°
8°
0°
6.20
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
6
MAX
H
θ
M C A S B S
MILLIMETERS
MIN
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO8
E X A M P LE : TH IS IS A N IR F 7 101
3 12
IN T E R N A TI ON A L
R E C T IF IE R
LO G O
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
XX X X
F 7 101
T OP
PART NUMBER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
B O T TO M
IRF7319
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E ED D IR E C T IO N
N O TE S:
1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R.
2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ).
3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 .
33 0. 00
(12 .99 2)
M A X.
1 4. 40 ( .5 66 )
1 2. 40 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
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http://www.irf.com/
Data and specifications subject to change without notice.
9/97