TO-220 3A Thyristor TF321M / TF341M / TF361M ■ Features External Dimensions (Unit: mm) 12.0 min ●Gate trigger current: IGT=10mA max 2.1max φ 3.75±0.1 a b ±0.15 1.35 4.0 max ●Average on-state current: IT(AV)=3A 5.0max 10.4max 16.7max 3.0±0.2 8.8±0.2 ●Repetitive peak off-state voltage: VDRM=200, 400, 600V +0.2 0.65 – 0.1 ±0.1 2.5 ± 1.7 0.2 ±0.1 2.5 (1). Cathode (K) (2). Anode (A) (3). Gate (G) (1) (2) (3) a. Part Number b. Lot Number Weight: Approx. 2.6g ■Absolute Maximum Ratings Parameter Symbol Repetitive peak off-state voltage Repetitive peak reverse voltage Ratings Unit TF321M TF341M TF361M VDRM 200 400 600 V VRRM 200 400 600 V Non-repetitive peak off-state voltage VDSM 300 500 700 V Non-repetitive peak reverse voltage VRSM 300 500 700 V Average on-state current RMS on-state current IT(AV) 3.0 A IT(RMS) 4.7 A Surge on-state current ITSM 60 A Peak forward gate current IFGM 2.0 A Peak forward gate voltage VFGM 10 V Peak reverse gate voltage VRGM 5.0 Peak gate power loss PGM 5.0 PG(AV) 0.5 W Junction temperature Tj –40 to +125 °C Storage temperature Tstg –40 to +125 °C Average gate power loss Conditions Tj= –40 to +125°C, RGK =1kΩ 50Hz Half-cycle sinewave, Continuous current, Tc=102°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C f 50Hz, duty V f 50Hz W f 50Hz, duty 10% 10% ■Electrical Characteristics Parameter Ratings min typ max Unit Off-state current IDRM 2.0 mA Reverse current IRRM 2.0 mA On-state voltage VTM 1.4 V Gate trigger voltage VGT 1.5 V Gate trigger current IGT 10 mA Gate non-trigger voltage VGD Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance 6 Symbol 2.0 V 0.1 IH 4.0 mA dv/dt 50 V/µS tq 30 Rth µS 3.0 °C/W Conditions Tj=125°C, VD=VDRM(VRRM), RGK=1kΩ TC=25°C, ITM=5A VD=6V, RL=10Ω, TC=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ RGK=1kΩ, Tj=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF Tc=25°C Junction to case TF321M / TF341M / TF361M ITSM Ratings 1 40 20 6 2 1 Tj = –40°C vGF (V) 60 8 = 5W Tj = 25°C 5 10 10 ms 1cycle 80 P GM 10 ITSM Gate voltage Tj =125°C 12 Initial junction temperature Tj=125°C Tj = –20°C Surge on-state current ITSM (A) iT (A) 50 On-state current Gate Characteristics 100 Tj =25°C 100 Gate trigger voltage VGT (V) vT – iT Characteristics (max) 0 0 10 20 30 Gate trigger current IGT (mA) 4 2 See graph at the upper right 0.5 3.0 0° DC 0° 18 Case temperature TC (°C) 4 0 0 90° 180° IH temperature Characteristics (Typical) ) 50% tw TC =– 40°C –20°C 25°C 75°C 125°C 10 trigger current igt (Gate ) at Ta and tw 1 0.1 10 2 10 3 Pulse width t w (µs) 10 4 1 10 2 10 3 Pulse width t w (µs) 10 (Typical) 0.2 0 –40 0 25 50 75 100 Junction temperature Tj (°C) 125 50 75 100 125 10 rth (°C/W) 5 4 3 2 1 0 –40 25 Transient thermal resistance Characteristics (Junction to case) Transient thermal resistance Gate trigger current IGT (mA) Gate trigger voltage VGT (V) 0.4 (VD=6V, RL=10Ω) 6 0 Junction temperature Tj (°C) IGT temperature Characteristics 0.6 5 0 –40 10 4 (Typical) 0.8 10 0.1 0.05 0.5 1 VGT temperature Characteristics (VD=6V, RL=10Ω) (RGK=1kΩ) 15 igt ( ( TC =– 40°C –20°C 25°C 75°C 125°C 1.0 5 Holding current IH (mA) tw 10 gate trigger IGT DC current at 25°C ) gate trigger VGT DC voltage at 25°C trigger voltage vgt ( Gate ) at Ta and tw 30 50% 10 1 2 3 4 Average on-state current IT(AV) (A) Pulse trigger temperature Characteristics igt (Typical) vgt 0.05 0.5 1 0° 25 Average on-state current IT(AV) (A) 30 3 50 5 Pulse trigger temperature Characteristics vgt (Typical) 120° 150° 75 0 3 2 iGF (A) 100 1 2 180° θ 60° 0° 15 ° 90 60 30 ° θ= 2 1 1 Gate current 50Hz Half-cycle sinewave θ: Conduction angle 125 ° 4 0 0 100 IT(AV) – Tc Ratings 12 Average on-state power PT(AV) (W) 0° θ 180° 0 50 150 50Hz Half-cycle sinewave θ: Conduction angle 3 10 Number of cycle IT(AV) – PT(AV) Characteristics 5 5 vT ( V ) On-state voltage 6 0 1 4.0 DC 2.0 θ=30° 0.3 1.0 0 25 50 75 100 Junction temperature Tj (°C) 125 1 0.1 1 10 10 2 10 3 10 4 t, Time (ms) 7