DIODE MODULE DD(KD)100HB120/160 UL;E76102 M Power Diode Module DD100HB series are designed for various rectifier circuits. DD100HB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1,600V is avaiable for various input voltage. Isolated mounting base Two elements in a package for simple (single and three phase) bridge connections Highly reliable glass passivated chips High surge current capability Applications Various rectifiers, Battery chargers, DC motor drives Unit a Maximum Ratings Symbol Tj 25 Ratings Item DF100HB120 DD100HB160 Unit VRRM Repetitive Peak Reverse Voltage 1200 1600 V VRSM Non-Repetitive Peak Reverse Voltage 1350 1700 V Symbol Item IF AV IF (RMS) IFSM Conditions Ratings Unit Average Forward Current Single phase, half wave, 180 conduction, Tc 111 100 A R.M.S. Forward Current Single phase, half wave, 180 conduction, Tc 111 155 A Surge Forward Current 1 I2t I2t Tj Junction Temperature Tstg Storage Temperature VISO Isolation Voltage Mounting Torque 2 cycle, 50/60HZ, peak value, non-repetitive Value for one cycle of surge current 1800/2000 16500 40 150 A.C.1minute 40 125 2500 Mounting M6 Recommended Value 2.5 3.9 25 40 4.7 48) Terminal M5 Recommended Value 1.5 2.5 15 25 2.7 28) 170 Mass A A2S V N m f B g Electrical Characteristics Symbol Item IRRM Repetitive Peak Reverse Current, max. at VFM Forward Voltage Drop, max. Foward current 320A Tj 25 Junction to case Rth j-c 77 Thermal Impedance, max. VDRM, Conditions Ratings Unit single phase, half wave. Tj 150 30 mA 1.35 V 0.30 /W Inst. measurement DD(KD)100HB120/160 78