HYBRID GATE DRIVER IC FOR IGBT GH-038 SanRex Hybrid Gate Driver IC for IGBT High Voltage isolation by Photo Coupler Enable to drive IGBT up to dual 300A module Operate with single power source Support to high-density system design Built-in opto coupler input resistor 330 The model name is indicated on the back of the product. Maximum Ratings Symbol Item Min. Typ. Max. Unit VCC Supply Voltage 23.0 26.0 28.0 V VOH Forward Bias Output Voltage VCC 26.0V 16.0 18.0 19.0 V VCC 26.0V 07.0 08.0 09.0 V 05.0 07.0 V 10.6 12.2 mA VRB Reverse Bias Supply Voltage VFIN Photo Coupler Input Voltage IF Photo Coupler Input Current VFIN 5.0V Ig1 Output Forward Current PW 2 s Dutycycle 0.05 04.0 06.0 A Ig2 Output Reverse Current PW 2 s Dutycycle 0.05 04.0 06.0 A tPLH tPHL Switching Time-High side VCC 26.0V IF 10mA 01.5 s Switching Time-Low side VCC 26.0V IF 10mA 01.5 s Rise Time VCC 26.0V IF 10mA 01.0 s VCC 26.0V IF 10mA 01.0 tr tf Fall Time dv/dt Common Mode Transient immunity Visc Topr Input Output Isolation Voltage Operational Ambient Temperature Tstg Storage Temperature Equivalent Circuit 67 Conditions Unless otherwise Tj 25 Ratings 09.0 5k AC50/60HZ 1minute 10k AC2500 25 80 40 125 s V/ s V GH-038 Examble of Application 1 To assure required voltage the capacitor >10 F hase to be connected as close to the Driver IC as possible. 2 For the value of gate resistor, the resistance value described in IGBT Module specification is recommended. The gate resistance should be determined at less than 6A of peak output current judging from signal delay time and surge voltage. Switching wave form 68