DIODE MODULE DD(KD)100GB40/80 UL;E76102 M Power Diode Module DD100GB series are designed for various rectifier circuits. DD100GB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V is avaiable for various input voltage. Isolated mounting base Two elements in a package for simple (single and three phase) bridge connections Highly reliable glass passivated chips High surge current capability Applications Various rectifiers, Battery chargers, DC motor drives Unit a Maximum Ratings Symbol Tj 25 Ratings Item DD100GB40 DD100GB80 Unit VRRM Repetitive Peak Reverse Voltage 400 800 V VRSM Non-Repetitive Peak Reverse Voltage 480 960 V Symbol Item IF AV IF (RMS) IFSM Average Forward Current Conditions Ratings Unit Single phase, half wave, 180 conduction, Tc 115 100 A R.M.S. Forward Current Single phase, half wave, 180 conduction, Tc 115 155 A Surge Forward Current 1 I2t I2t Tj Junction Temperature Tstg Storage Temperature VISO Isolation Breakdown Voltage R.M.S. Mounting Torque 2 cycle, 50/60HZ, peak value, non-repetitive Value for one cycle of surge current 1800/2000 16500 40 150 A.C.1minute 40 125 2500 Mounting M6 Recommended Value 2.5 3.9 25 40 4.7 48) Terminal M5 Recommended Value 1.5 2.5 15 25 2.7 28) 170 Mass A A2S V N m f B g Electrical Characteristics Symbol Item IRRM Repetitive Peak Reverse Current, max. at VDRM, single phase, half wave. Tj 150 VFM Forward Voltage Drop, max. Foward current 320A Tj 25 Junction to case Rth j-c 75 Thermal Impedance, max. Conditions Inst. measurement Ratings Unit 30 mA 1.25 V 0.30 /W DD(KD)100GB40/80 76