SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V (D-S) 175C MOSFET V(BR)DSS (V) 30 rDS(on) () ID (A)a 0.007 @ VGS = 10 V 85 a 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P Top View SUP85N03-07P N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Current (TJ = 175C) 175 C) TC = 100C Pulsed Drain Current IDM Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb ID L = 0.1 mH TC = 25C (TO-220AB and TO-263) TA = 25C (TO-263)d Operating Junction and Storage Temperature Range V 85a 64 A 240 IAR 75 EAR 280 PD Unit 107c 3.75 mJ W TJ, Tstg –55 to 175 C Symbol Limit Unit Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case 40 RthJA RthJC 62.5 C/W 1.4 Notes a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71147 S-00757—Rev. B, 10-Apr-00 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB85N03-07P New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Z G V l D i Current C On-State Drain Currenta IDSS ID(on) V VDS = 30 V, VGS = 0 V, TJ = 125C 50 VDS = 30 V, VGS = 0 V, TJ = 175C 250 VDS w 5 V, VGS = 10 V 120 VGS = 10 V, ID = 30 A a D i Source S O State S R i Drain-Source Drain On On-State Resistance Forward Transconductancea rDS(on) DS( ) gfs 2 mA A A 0.006 0.007 VGS = 10 V, ID = 30 A, TJ = 125C 0.011 VGS = 10 V, ID = 30 A, TJ = 175C 0.015 VGS = 4.5 V, ID = 20 A 0.01 VDS = 15 V, ID = 30 A nA 20 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargeb Qg Gate-Source Chargeb Qgs 3720 VGS = 0 V, VDS = 25 V, f = 1 MHz pF F 715 370 60 VDS = 15 V, V VGS = 10 V V, ID = 85 A 120 nC C 13 Gate-Drain Chargeb Qgd Turn-On Delay Timeb td(on) 11 25 tr 70 140 50 100 105 200 Rise Timeb Turn-Off Delay Timeb Fall Timeb td(off) 10 VDD = 15 V V,, RL = 0 0.18 18 W ID ^ 85 A, A VGEN = 10 V V, RG = 2 2.5 5W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25C)c Continuous Current IS 85 Pulsed Current ISM 200 Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.2 1.5 V trr IF = 85 A, di/dt = 100 A/ms 55 100 ns A Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 71147 S-00757—Rev. B, 10-Apr-00 SUP/SUB85N03-07P New Product Vishay Siliconix Output Characteristics Transfer Characteristics 250 120 VGS = 10 thru 6 V 5V 100 I D – Drain Current (A) I D – Drain Current (A) 200 150 4V 100 50 2V 80 60 40 TC = 125C 20 3V 25C –55C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.020 120 TC = –55C r DS(on) – On-Resistance ( ) g fs – Transconductance (S) 100 25C 80 125C 60 40 20 0 0.015 0.010 VGS = 4.5 V VGS = 10 V 0.005 0 0 20 40 60 80 100 0 20 40 ID – Drain Current (A) 80 100 48 60 ID – Drain Current (A) Capacitance Gate Charge 5000 10 V GS – Gate-to-Source Voltage (V) Ciss 4000 C – Capacitance (pF) 60 3000 2000 Coss 1000 VDS = 50 V ID = 85 A 8 6 4 2 Crss 0 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 71147 S-00757—Rev. B, 10-Apr-00 30 0 12 24 36 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB85N03-07P New Product Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S – Source Current (A) r DS(on) – On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.2 0.8 TJ = 150C 10 TJ = 25C 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 TJ – Junction Temperature (C) 40 38 V(BR)DSS (V) 100 IAV (A) @ TA = 25C I Dav (a) 1.2 Drain Source Breakdown vs. Junction Temperature 1000 10 IAV (A) @ TA = 150C ID = 250 mA 36 34 1 32 0.1 0.0001 0.001 0.01 tin (Sec) www.vishay.com FaxBack 408-970-5600 2-4 0.9 VSD – Source-to-Drain Voltage (V) Avalanche Current vs. Time 0.00001 0.6 0.1 1 30 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (C) Document Number: 71147 S-00757—Rev. B, 10-Apr-00 SUP/SUB85N03-07P New Product Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 100 10 ms 80 I D – Drain Current (A) I D – Drain Current (A) 100 60 40 100 ms 10 0 1 ms 10 ms 100 ms dc 1 20 Limited by rDS(on) TC = 25C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Ambient Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Document Number: 71147 S-00757—Rev. B, 10-Apr-00 www.vishay.com FaxBack 408-970-5600 2-5