THYRISTOR MODULE PK(PD,PE,KK)90GB UL;E76102 （M） Power Thyristor/Diode Module PK90GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 800V are available. and electrically isolated mounting base make your mechanical design easy. 93.5MAX 80 ~ ● dv/dt 16.5 K2 G2 2 3 A1K2 2 2 2 1 K2 G2 110TAB K2 G2 1 K1 G1 （A2） （K2） 3-M5 K1 （A2） PE K2 3 – 23 1 （K2） PK A1K2 + 23 K2 G2 1 K1 G1 （A2） （K2） 1 1 K1 G1 （A2） （A1） PD 21 3 A1K2 30MAX （Applications） Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches 2- 6.5 2 13 Internal Configurations 200 A/μs 500V/μs 3 K1 G1 ● di/dt 26MAX ● IT(AV) 90A, IT(RMS) 140A, ITSM 1800A Unit：A KK ■Maximum Ratings Ratings Symbol Item PK90GB40 PD90GB40 KK90GB40 PE90GB40 400 PK90GB80 PD90GB80 KK90GB80 PE90GB80 800 Unit VRRM ＊Repetitive Peak Reverse Voltage VRSM ＊Non-Repetitive Peak Reverse Voltage 480 960 V VDRM ＊Non-Repetitive Peak Reverse Voltage 400 800 V Symbol Item IT（AV） ＊Average On-State Current Conditions Single phase, half wave, 180°conduction, Tc：88℃ IT（RMS） ＊R.M.S. On-State Current Single phase, half wave, 180°conduction, Tc：88℃ ITSM ＊Surge On-State Current 1 ／2cycle, ＊I t Value for one cycle of surge current It 2 2 50Hz/60Hz, peak Value, non-repetitive Ratings V Unit 90 A 140 A 1650/1800 15000 A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 3 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage (Forward) 10 V VRGM Peak Gate Voltage (Reverse) 5 V di／dt Critical Rate of Rise of On-State Current VISO ＊Isolation Breakdown Voltage (R.M.S.) Tj ＊Operating Junction Temperature Tstg IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs A.C.1minute ＊Storage Temperature Mounting Torque 200 A /μs 2500 V −40 to ＋125 ℃ −40 to ＋125 ℃ Mounting（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） N･ｍ （㎏f･B） 170 g Ratings Unit Mass ■Electrical Characteristics Symbol Item IDRM Repetitive Peak Off-State Current, max. Conditions at VDRM, single phase, half wave, Tj＝125℃ IRRM ＊Repetitive Peak Reverse Current, max. at VDRM, single phase, half wave, Tj＝125℃ VTM ＊Peak On-State Voltage, max. On-State Current 270A, Tj＝125℃ Inst. measurement 15 mA 15 mA 1.30 V 100/3 0.25 mA/V V IGT／VGT Gate Trigger Current/Voltage, max. Tj＝25℃，IT＝1A，VD＝6V VGD Non-Trigger Gate, Voltage. min. Tj＝125℃，VD＝1／2VDRM tgt Turn On Time, max. IT＝90A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs Critical Rate of Rise of Off-State Voltage, min. Tj＝125℃, VD＝2／3VDRM, Exponential wave. IH Holding Current, typ. Tj＝25℃ IL Lutching Current, typ. Tj＝25℃ 100 mA Junction to case 0.30 ℃/W dv／dt Rth（j-c）＊Thermal Impedance, max. ＊mark：Thyristor and Diode part. No mark：Thyristor part 23 10 μs 500 V/μs 50 mA ;; PK(PD,PE,KK)90GB Gate Characteristics ５ Ga te ２ Po we （ r 3W ） ） １００ ５ ２ −30℃ １０２ ５ ２ ２ １０３ ５ ２ ２ Tj＝125℃ １０２ ５ ２ ５ ５ ０． ５ ２． ０ ２． ５ Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） １４０ Per one element 2 １２０ D.C. 2 。 360 : Conduction Angle ０ ２０ ４０ ６０ 。 360 １００ θ＝180゜ θ＝120゜ θ＝90゜ θ＝60゜ θ＝30゜ ５０ : Conduction Angle ８０ D.C. ６０ θ＝30゜ θ＝90゜ θ＝180゜ θ＝60゜ θ＝120゜ ４０ ２０ ０ ８０ １００ １２０ １４０ １６０ １８０ ２００ Transient Thermal Impedance θj-c（℃/W） Surge On-State Current Rating （Non-Repetitive） １５００ ６０ １００ ２ ８０ １００ １２０ １４０ １６０ １８０ ２００ 60Hz ５ １０１ Junction to case ０． ３ Per one element ０． ２ １０００ 50Hz ５００ ０． １ ５ １０ ２０ ５０ １００ Time（cycles） W１；Bidirectional connection Id（Ar.m.s.） W3 B6 ６００ Rth:0.8℃/W Rth:0.4℃/W Rth:0.3℃/W Rth:0.2℃/W Rth:0.1℃/W B2 ３００ W1 ９０ １００ 1５０ ０ ５０ １００ １５０２００２５０ ３００ Output Current（A） １１０ １２０ １２５ ０ ２５ ５０ ７５ １００ １２５ Ambient Temperature（℃） Allowable Case Temperature（℃） Output Current ０ ２ ５ １０-３ ２ ５ １０-２ ２ Time t（sec） B２；Two Pluse bridge connection ６００ 4５０ ３００ ５ １０-１ ２ ５ １００ B６；Six pulse bridge connection Ｗ３；Three phase bidiretional connection Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Rth:0.1℃/W Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Rth:0.1℃/W Id（Aav.） １００ Id（Aav.） １００ Id（Ar.m.s.） １１０ １１０ １５０ ０ １２０ １２５ ０ ２５ ５０ ７５ １００ １２５ １２０ １２５ ０ ２５ ５０ ７５ １００ １２５ Allowable Case Temperature（℃） ２ Total Power Dissipation（W） ０ １ 4５０ ４０ Transient Thermal Impedance ０． ４ Per one element Ｔ ｊ=２５℃ start ７５０ ２０ Average On-State Current（A） Average On-State Current（A） ２０００ ３． ０ Average On-State Current Vs Power Dissipation （Single phase half wave） １００ Surge On-State Current（A） １． ５ On-State Voltage（V） １５０ Total Power Dissipation（W） １． ０ Gate Current（mA） Per one element Power Dissipation（W） ５ １０１ Maximum Gate Voltage that will not trigger any unit（0.25V） １０１ ２００ On-State Current（A） Pe Po ak G we a （ r te 10 W Av er ag e Allowable Case Temperature（℃） Gate Voltage（V） １０１ 125℃ 25℃ On-State Voltage max １０3 Peak Forward Gate Voltage（10V） Peak Gate Current（3A） ２ Ambient Temperature（℃） Ambient Temperature（℃） 24