THYRISTOR MODULE PK(PD,PE,KK)25HB UL;E76102 （M） Power Thyristor/Diode Module PK25HB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. and electrically isolated mounting base make your mechanical design easy. Internal Configurations 3 A1K2 2 K1 G1 （A2） 3 A1K2 2 2 2 1 K2 G2 K2 G2 1 K1 G1 （A2） （K2） 3-M5 110TAB K1 （A2） PE K2 3 – 23 1 （K2） PK A1K2 + 23 K2 G2 1 （K2） ~ 16.5 K2 G2 （Applications） Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches 1 1 K1 G1 （A2） （A1） PD 21 100 A/μs ● dv/dt 500V/μs 30MAX ● di/dt 2- 6.5 2 K1 G1 ● IT(AV) 25A, IT(RMS) 39A, ITSM 500A 3 13 26MAX 93.5MAX 80 Unit：A KK ■Maximum Ratings Ratings Symbol Item VRRM ＊Repetitive Peak Reverse Voltage PK25HB120 PD25HB120 KK25HB120 PE25HB120 1200 PK25HB160 PD25HB160 KK25HB160 PE25HB160 1600 Unit V VRSM ＊Non-Repetitive Peak Reverse Voltage 1350 1700 V VDRM Repetitive Peak Off-State Voltage 1200 1600 V Symbol Item IT（AV） ＊Average On-State Current Conditions Single phase, half wave, 180°conduction, Tc：94℃ IT（RMS） ＊R.M.S. On-State Current Single phase, half wave, 180°conduction, Tc：94℃ ITSM ＊Surge On-State Current 1 ／2cycle, ＊I t Value for one cycle of surge current It 2 2 50Hz/60Hz, peak Value, non-repetitive Ratings Unit 25 A 39 A 450/500 1000 A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 1 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage (Forward) 10 V VRGM Peak Gate Voltage (Reverse) 5 V di／dt Critical Rate of Rise of On-State Current VISO ＊Isolation Breakdown Voltage (R.M.S.) Tj ＊Operating Junction Temperature Tstg IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs A.C.1minute ＊Storage Temperature Mounting Torque 100 A/μs 2500 V −40 to ＋125 ℃ −40 to ＋125 ℃ Mounting（M6） Recommended Value 2.5-3.9（25-40） 4.7（ 48） Terminal（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） N･ｍ （㎏f･B） 170 g Ratings Unit Mass ■Electrical Characteristics Symbol Item IDRM Repetitive Peak Off-State Current, max. Conditions at VDRM, single phase, half wave, Tj＝125℃ 4 mA 4 mA IRRM ＊Repetitive Peak Reverse Current, max. at VDRM, single phase, half wave, Tj＝125℃ VTM ＊Peak On-State Voltage, max. On-State Current 75A, Tj＝125℃ Inst. measurement 1.60 V 50/2 0.25 mA/V V IGT／VGT Gate Trigger Current/Voltage, max. Tj＝25℃，IT＝1A，VD＝6V VGD Non-Trigger Gate, Voltage. min. Tj＝125℃，VD＝1／2VDRM tgt Turn On Time, max. IT＝25A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs Critical Rate of Rise of Off-State Voltage, min. Tj＝125℃, VD＝2／3VDRM, Exponential wave. IH Holding Current, typ. Tj＝25℃ IL Lutching Current, typ. Tj＝25℃ 100 mA Junction to case 0.80 ℃/W dv／dt Rth（j-c）＊Thermal Impedance, max. 10 μs 500 V/μs 50 mA ＊mark：Thyristor and Diode part. No mark：Thyristor part SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] ;; PK(PD,PE,KK)25HB Gate Characteristics ２ Ga te Po we （ r １００ 1W ） ） ５ 125℃ ２ ２ １０２ ５ ２ ５ １０３ ２ Tj＝125℃ １０２ ５ ２ １０１ ０． ５ ５ ２． ５ ３． ０ Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） Allowable Case Temperature（℃） １４０ Per one element 2 １２０ D.C. 。 360 １００ θ＝180゜ θ＝120゜ θ＝90゜ θ＝60゜ θ＝30゜ ３０ 2 ２０ 。 360 １０ : Conduction Angle ０ １０ ２０ ３０ ４０ ６０ Transient Thermal Impedance θj-c（℃/W） 60Hz 50Hz １００ ０ １ ２ ５ １０ ２０ ５０ １００ Output Current W１；Bidirectional connection Conduction Angle 180゜ W3 Id（Ar.m.s.） B6 ２００ Rth:1.0℃/W Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.1℃/W B2 １５０ １００ W1 ９０ １００ ５０ ０ １１０ ２５ ５０ Output Current（A） ７５ １２０ １２５ ０ ２５ ５０ ７５ １００ １２５ Ambient Temperature（℃） Allowable Case Temperature（℃） Time（cycles） ２０ １０ ２０ ３０ ４０ ５０ Transient Thermal Impedance ０． ９ １００ ２ ５ １０１ Junction to case ０． ６ Per one element ０． ３ ０ ２５０ Total Power Dissipation（W） Surge On-State Current（A） ４００ ２００ D.C. Average On-State Current（A） Per one element Ｔ ｊ=２５℃ start ３００ θ＝30゜ θ＝90゜ θ＝180゜ θ＝60゜ θ＝120゜ ４０ ０ ５０ Surge On-State Current Rating （Non-Repetitive） ５００ : Conduction Angle ８０ Average On-State Current（A） Total Power Dissipation（W） ２． ０ Average On-State Current Vs Power Dissipation （Single phase half wave） ４０ ２５０ １． ５ On-State Voltage（V） ５０ ６００ １． ０ Gate Current（mA） Per one element Power Dissipation（W） ２ ５ Maximum Gate Voltage that will not trigger any unit（0.25V） １０−１ １０１ ６０ 25℃ −30℃ On-State Voltage max ２００ １５０ １０-３ ２ ５ １０-２ ２ ５ １０-１ ２ Time t（sec） B２；Two Pluse bridge connection Rth:1.0℃/W Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.1℃/W ５ １００ B６；Six pulse bridge connection Ｗ３；Three phase bidiretional connection Rth:1.0℃/W Rth:0.1℃/W Id（Aav.） １００ Rth:0.8℃/W Id（Aav.） Id（Ar.m.s.） １００ １１０ １００ １１０ Rth:0.6℃/W Rth:0.4℃/W ５０ １２０ １２５ ０ ２５ ５０ ７５ １００ １２５ １２０ １２５ ０ ２５ ５０ ７５ １００ １２５ Ambient Temperature（℃） Ambient Temperature（℃） Allowable Case Temperature（℃） Av er ag e ５ Pe Po ak G we a （ r te 10 W On-State Current（A） Peak Forward Gate Voltage（10V） １０１ Gate Voltage（V） ５ Peak Gate Current（3A） ２