TRANSISTOR MODULE QCA200A40/60 UL;E76102 （M） 108max 93±0.5 E2 B2 E2 B1X E1 B1 25.0 E2 B2X B2 C2E1 25.0 14.0 B1 C1 3-M6 L=10max AMP110 t=0.5 30.0max 33.0max 24.0max （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application C1 B2X 63.0max 15 saturation voltage for higher efficiency. ● High DC current gain hFE ● Isolated mounting base ● VEBO 10V for faster switching speed. 37.0max 15 C2E1 ● Low 7.57.56.06.0 ● IC＝200A、VCEX＝400/600V 4-φ6.5 48±0.5 QCA200 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, Unit：A ■Maximum Ratings （Tj＝25℃ unless otherwise specified） Symbol Item Conditions VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage IC −IC VBE＝−2V Ratings QCA200A40 QCA200A60 400 600 V 400 600 V 10 （ ）pw≦1ms Collector Current IB Base Current Total power dissipation V 200（400） A 200 A Reverse Collector Current PT Unit TC＝25℃ 12 A 1250 W Tj Junction Temperature −40 to ＋150 ℃ Tstg Storage Temperature −40 to ＋125 ℃ VISO Isolation Voltage Mounting Torque 2500 V Mounting（M6） A.C.1minute Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） N･m (㎏f･B) 470 g Mass Typical Value ■Electrical Characteristics Symbol Item Conditions Ratings Min. Max. Unit ICBO Collector Cut-off Current VCB＝VCBO 2.0 mA IEBO Emitter Cut-off Current VEB＝VEBO 800 mA QCA200A40 VCEO（SUS） Collector Emitter Sustaning Voltage VCEX（SUS） hFE QCA200A60 QCA200A40 QCA200A60 DC Current Gain Ic＝1A Ic＝40A，IB2＝−8A 300 V 450 400 V 600 Ic＝200A，VCE＝2V 75 Ic＝200A，VCE＝5V 100 VCE(sat) Collector-Emitter Saturation Voltage Ic＝200A，IB＝2.7A 2.0 V VBE(sat) ton Base-Emitter Saturation Voltage Ic＝200A，IB＝2.7A 2.5 V ts On Time Switching Time tf VECO Rth(j-c) Storage Time Fall Time 2.0 Vcc＝300V，Ic＝200A IB1＝4A，IB2＝−4A 12.0 μs 3.0 Collector-Emitter Reverse Voltage −Ic＝200A 1.4 Thermal Impedance (junction to case) Transistor part 0.1 Diode part 0.3 V ℃/W SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] QCA200A40/60 D.C. Current Gain Saturation Characteristics Collector-Emitter Voltage VＣＥ （V） Base-Emitter Voltage VBE（V） １０３ DC Current Gain hFE ５ Tj ２ 125℃ Tj 25℃ ２ １０ ５ Typical VCE VCE ２ １００ ２ ５ １０１ ２ １０２ ５ 5V 2V ２ ５ ６ 120A Ic Forward Bias Safe Operating Area Typical ４ Ic 160A ２ ０ ５ １０−１ ２ ５ １０ ms 1m s ５ ５ １０１ ２ Reverse Bias Safe Operating Area IB2 −3A IB2 −8A ３００ ２５０ IS /B ５ Tc 25℃ Non-Repetitive ２ ２００ Lim ite d １５０ Tj 125℃ １００ １０１ OCA200 A40 １０１ ５ ２ ５ １０２ ５０ OCA200 A60 ２ ５ ０ ０ １０３ Collector-Emitter Voltage VCE（V） Collector Current Derating Factor Lim Collector Reverse Current -Ic（A） IS/B ited PT Lim ite d ５０ ０ ０ ５０ １００ １５０ ５ １０２ Typical ts ２ ４００ ５００ ６００ ７００ Ｔ ｊ=２５℃ Maximum ２ １０１ ５ ２ １００ ０ １． ０ １． ５ ２． ０ ２ Maximum Transient Thermal Impedance Characteristics Max 50msec∼50sec Junction to Case ５ ２ 100μsec∼50msec −２ １０ １００ tf ５ １０−１ ０ ３００ ５ １０−１ ５ ２ Transient Thermal Impedance θj-c（℃/W） Vcc 300V IB1 4A IB2 −4A Tj 25℃ ２ ２００ Emitter-Collector Voltage VECO（V） Collector Current Vs Switching Time １０１ １００ OCA200 A60 Forward Voltage of Free Wheeling Diode ２ Case Temperature（℃） ５ OCA200 A40 Collector-Emitter Voltage VCE（V） １００ Derating Factor（%） ２ ３５０ ２ １０１ ５ Switching Time ton tf ts（μs） １００ Collector Current Ic（A） ４００ 0μ s 200A 160A 120A １ Collector Current Ic（A） 50 ２ 10 Collector Current Ic（A） PT Limited ２ Ic Ic Ic ３ ４５０ Pu 10 lse W 0μ id s e VCE VBE 200A ５ Collector Current Ic（A） ５ Ic ton ４０ ８０ １２０ Collector Current Ic（A） １６０ ２００ ５ ２ １００μ２００μ ５００μ １ｍ ５０ｍ１００ｍ２００ｍ ５００ｍ １ ２ｍ ５ｍ １０ｍ ２０ｍ ５０ｍ ２ ５ ５０ １０ ２０ Time t（sec） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]