TRANSISTOR MODULE QCA75AA100 UL;E76102 M QCA75AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 75A, VCEX 1000V Low saturation voltage for higher efficiency. High DC current gain hFE Isolated mounting base Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol Tj 25 Item Conditions Ratings QCA75AA100 Unit VCBO Collector-Base Voltage 1000 V VCEX Collector-Emitter Voltage 1000 V VEBO Emitter-Base Voltage IC IC VBE 2V 7 V Collector Current 75 A Reverse Collector Current 75 A IB Base Current PT Total power dissipation TC 25 4 A 500 W Tj Junction Temperature 40 Tstg Storage Temperature VISO Isolation Voltage A.C.1minute 40 125 2500 Mounting M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M5 Recommended Value 1.5 2.5 15 25 Typical Value 2.7 28 250 Mounting Torque Mass 150 N m f B g Electrical Characteristics Symbol Tj 25 Item Conditions ICBO Collector Cut-off Current VCB 1000V IEBO Emitter Cut-off Current VEB 7V VCEX SUS hFE Collector Emitter Sustaning Voltage DC Current Gain V Ic 15A IB2 4A Ic 75A VCE 2.8V Ic 75A VCE 5V Ratings Min. Max. Unit 1.00 mA 200 mA 1000 V 75 100 VCE(sat) Collector-Emitter Saturation Voltage Ic 75A IB 1.5A 2.50 V VBE(sat) ton Base-Emitter Saturation Voltage Ic 75A IB 1.5A 3.50 V ts tf VECO Rth(j-c) 11 On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) 2.50 Vcc 600V Ic 75A 1.5A IB1 1.5A IB2 15.00 s 3.00 Ic 75A Transistor part 1.80 Diode part 1.20 0.25 V /W QCA75AA100 12 TRANSISTOR MODULE QCA75AA120 UL;E76102 M QCA75AA120 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 75A, VCEX 1200V Low saturation voltage for higher efficiency. High DC current gain hFE Isolated mounting base Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol Tj 25 Item Conditions Ratings QCA75AA120 Unit VCBO Collector-Base Voltage 1200 V VCEX Collector-Emitter Voltage 1200 V VEBO Emitter-Base Voltage 10 V Collector Current 75 A Reverse Collector Current 75 A IC IC IB Base Current PT Total power dissipation VBE 2V TC 25 4 A 500 W Tj Junction Temperature 40 Tstg Storage Temperature VISO Isolation Voltage A.C.1minute 40 125 2500 Mounting M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M5 Recommended Value 1.5 2.5 15 25 Typical Value 2.7 28 250 Mounting Torque Mass 150 N m ( f B) g Electrical Characteristics Symbol Tj 25 Item Conditions ICBO Collector Cut-off Current VCB 1200V IEBO Emitter Cut-off Current VEB 10V VCEX SUS hFE V Collector Emitter Sustaning Voltage Ic 15A IB2 3A Ratings Min. Max. Unit 1.00 mA 300 mA 1200 V DC Current Gain Ic 75A VCE 5V VCE(sat) Collector-Emitter Saturation Voltage Ic 75A IB 1.5A 3.00 V VBE(sat) ton Base-Emitter Saturation Voltage Ic 75A IB 1.5A 3.50 V ts tf VECO Rth(j-c) 13 On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) 75 2.50 Vcc 600V Ic 75A 1.5A IB1 1.5A IB2 15.00 s 3.00 Ic 75A Transistor part 1.80 Diode part 1.20 0.25 V /W QCA75AA120 14