TRANSISTOR MODULE（Hi-β） QCA75BA60 UL;E76102 （M） QCA75BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode (trr：200ns). The mounting base of the module is electrically isolated from Semiconductor elements for simple heatsink construction, ● Low C2E1 3ｰM5 E2 C1 80 2ｰφ6.5 C2E1 E2 31max （8）14.5 （3） B2 E2 6.5mm 110TAB C1 （2） （Applications） Motor Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application E1B1 E2B2 VCEX＝600V saturation voltage for higher efficiency. ● ULTRA HIGH DC current gain hFE. hFE≧750 ● Isolated mounting base ● VEBO 10V for faster switching speed. 34max 13 ● IC＝75A, 20 27 8 8 8 12 7 6.5 4.5 7 12 8 6.5 4.5 94max 20 E1 B1 ■Maximum Ratings Symbol （Tj＝25℃ unless otherwise specified） Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage IC −IC Unit：A Collector Current Ratings Conditions VBE＝−2V IB Base Current Total power dissipation 600 V 600 V 10 （ ）pw≦1ms V A 75（150） Reverse Collector Current PT Unit QCA75BA60 75 TC＝25℃ A 4.5 A 350 W Tj Junction Temperature −40 to ＋150 ℃ Tstg Storage Temperature −40 to ＋125 ℃ VISO Isolation Voltage Mounting Torque 2500 V Mounting （M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Termnal（M5） 2.7（28） N･m ㎏f･B 240 g Mass A.C.1minute Recommended Value 1.5-2.5（15-25） Typical Value ■Electrical Characteristics Symbol Item Conditions ICBO Collector Cut-off Current VCB＝VCBO IEBO Emitter Cut-off Current VEB＝VEBO VCEO（SUS） Collector Emitter Sustaning VCEX（SUS） Voltage Ratings Min. Typ. Max. Unit 1.0 mA 300 mA Ic＝1A 450 Ic＝15A，IB2＝−5A 600 D.C. Current Gain Ic＝75A，VCE＝2.5V 750 VCE（sat） Collector-Emitter Saturation Voltage Ic＝75A，IB＝100mA 2.5 V VBE（sat） Base-Emitter Saturation Voltage Ic＝75A，IB＝100mA 3.0 V hFE ton ts On Time Switching Time tf VECO trr Rth（j-c） V Storage Time Fall Time 2.0 Vcc＝300V，Ic＝75A IB1＝150mA，IB2＝−1.5A 8.0 Collector-Emitter Reverse Voltage Ic＝−75A Reverse Recovery time Vcc＝300V， −Ic＝75A， −di/dt＝75AμA， VBE＝−5V Thermal Impedance (junction to case) transistor part 0.35 Diode part 1.3 SanRex μs 2.0 1.8 V 200 ns ℃/W ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] QCA75BA60 D.C. Current Gain １０１ Switching Time ton ts t（μs） f ２ Typical ４ DC Current Gain hFE １０ ５ Tj 125℃ ２ １０３ ５ １００ ２ Typical Tj 25℃ ５ ２ ts １００ Tj 25℃ ２ Collector Current Vs Switching Time ５ ２ １０１ ５ ５ tf IB1 0.15A IB2 −1.5A VCC 300V ton ２ １０−１ ０ １０２ ２０ Forward Bias Safe Operating Area 10 １０２ 50 Typical ５ 10 m 1m s 0μ s 0μ s １４０ Pulse Wide １２０ s １０１ ５ Non-Repetitive Tc 25℃ １００ ５ １０１ ８０ ６０ ４０ ２０ ２ ５ １０２ ２ １０３ ５ Tj 125℃ ０ １００ Collector-Emitter Voltage VCE（V） Collector Current Derating Factor IS/B Limited ５０ PTLimited ０ ０ ５０ １００ １５０ ２ １０−１ ５ VBE 5V di/dt −75A/μs Typical ２ １０−１ ５ ０ ２ Qrr ２ Tj 25℃ ５０ １００ Reverse Collector Current -Ic（A） ５ １０−２ １５０ Transient Thermal Impedance θj-c（℃/W） trr １００ ５ Reverse Recovery Time trr（μC） Reverse Recovery Charge Qrr（μC） Reverse Recovery Current Irr（A） １００ lrr ２ ４００ ５００ ６００ ７００ １０２ ５ ２ Typical Tj 25℃ １０１ ５ ２ １００ ５ ３ ０ １． ０ ２． ０ ３． ０ Emitter-Collector Voltage VECO（V） Reverse Recovery Characteristics ５ ３００ Forward Voltage of Free Wheeling Diode Case Temperature（℃） １０１ ２００ Collector-Emitter Voltage VCE（V） Collector Reverse Current -Ic（A） Derating Factor（%） １００ IB2 −2.0A IB2 −3.5A １００ ２ ２ ８０ ６０ Reverse Bias Safe Operating Area １６０ 50 μ s Collector Current Ic（A） Collector Current Ic（A） ２ ４０ Collector Current I（ B A） Collector Current Ic（A） ５ Maximum Transient Thermal Impedance Characteristics Max 50msec∼50sec ２ １０−１ ５ ２ 100msec∼50sec Junction to Case １０−２ ５ ２ １０−４ ２ ５ −１ １０ ２ ５ １０−３ ２ ５ ５ ０ ２ ５ １０ １０−２ ２ １０１ ２ ５ ５ Time t（sec） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]