THYRISTOR MODULE SBA500AA UL;E76102 （M） （Applications） Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches 5 7 3 1 6 8 6-φ6.5 13.5 2 G1 A1 28±1 60±1 K2 28±1 48±1 4 K2 4-M4 depth8㎜ 4-M8 depth15㎜ G2 G1 Internal Configurations 8 K1 31 66max K1 A2 47±1 Isolated mounting base ● IT（AV）500A, IT（RMS）785A ● di/dt 200 A/μs ● dv/dt 500V/μs K1 138max 60±0.2 60±0.2 K1 A2 78max 60±0.2 13.5 Power Thyristor Module SBA500AA series are designed for high power rectifier control applications. Two independent thyristor elements in a electrically isolated package enable you to achieve flexible design, especially for AC switch application, idial terminal location for bus bar connection helps both your mechanical design and mounting procedure be more efficient. SBA series for two thyristors with blocking voltage up to 1600V are available. K2 Unit：A A1 K2 ■Maximum Ratings Ratings SBA500AA80 SBA500AA120 800 1200 960 1350 800 1200 Symbol Item VDRM VRSM VRRM Repetitive Peak Off-State Voltage Non-Repetitive Peak Reverse Voltage Repetitive Peak Reverse Voltage SBA500AA40 400 480 400 Item Average On-State Current Conditions Single phase, half wave, 180°conduction, Tc：66℃ Ratings 500 Unit A R.M.S. On-State Current Single phase, half wave, 180°conduction, Tc：66℃ 785 A Surge On-State Current 1／cycle, 2 I2t Value for one cycle of surge current 9.1/10.0 416 kA2S Symbol IT（AV） IT（RMS） ITSM I2t 50Hz/60Hz, peak Value, non-reqetitive SBA500AA160 1600 1700 1600 Unit V V V kA PGM Peak Gate Power Dissipation 15 W PG（AV） Average Gate Power Dissipation 5 W IFGM Peak Gate Current 5 A VFGM Peak Gate Voltage（Forward） 10 V VRGM Peak Gate Voltage（Reverse） 5 V di/dt VISO Critical Rate of Rise of On-State Current IG＝200mA， VD＝1／2VDRM， dIG/dt＝0.2A/μs Isolation Breakdown Voltage（R.M.S.） A.C. 1 minute Tj Tstg 200 A/μs 2500 V Operating Junction Temperature −40 to ＋125 ℃ Storage Temperature −40 to ＋125 ℃ Mounting（M6） Mounting Torque Terminal（M8） Terminal（M4） Mass Recommended Value 2.5-3.9 4.7 N･ｍ (Recommended Value 25-40) (48) (㎏f･B) Recommended Value 8.8-10 11.0 N･ｍ (Recommended Value 90-105) (115) (㎏f･B) Recommended Value 1.0-1.4 1.5 N･ｍ Recommended Value 10-14) (15) (㎏f･B) Typical Value 1100 g Ratings Unit 150 mA ■Electrical Characteristics Symbol Item Conditions IDRM Repetitive Peak Off-State Current, max. at VDRM, Single phase, half wave, Tj＝125℃ IRRM Repetitive Peak Reverse Current, max. at VDRM, Single phase, half wave, Tj＝125℃ 150 mA VTM Peak On-State Voltage, max. IT=1500A 1.45 V IGT Gate Trigger Current, max. VD＝6V，IT＝1A 200 mA VGT Gate Trigger Voltage, max. VD＝6V，IT＝1A VGD Non-Trigger Gate, Voltage. min. Tj＝125℃，VD＝1／2VDRM Critical Rate of Rise of Off-State Voltage, min. dv/dt Rth（j-c） Thermal Impedance, max. Tj＝125℃，VD＝2／3VDRM，exp, Junction to case waveform 3 V 0.25 V 500 V/μs 0.085 ℃/W SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] SBA500AA Gate Characteristics １００００ １００ Peak Forward Gate Voltag（10V） １０ ５ ２ 25℃ −40℃ １ ０． ５ 125℃ ０． ２ Maximum Gate Non-Trigger Voltage ０． １ １０ ５０ １００ ２００ ５００ １０００ ２０００ ２０００ Ｔ ｊ=２５℃ １０００ ５００ Maximum ２００ １００ ０． ５ ５０００ １００００ ２ ２． ５ Average On-State Current Vs Power Dissipation （Single phase half wave） Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） １３０ １２０ Per one element １１０ DC ８００ １００ １ ８ ０゜ １ ２ ０゜ ６００ ９ ０゜ ６ ０゜ ４００ ３ ０゜ 0 π ２π θ 360゜ ２００ ０ ０ θ：Conduction Angle １００ ２００ ３００ ４００ ５００ ６００ ７００ ８００ ９０ 0 ８０００ 60Hz ４０００ 50Hz ２０００ ０ １ ２ ５ １０ ２０ Time（cycles） ５０ １００ Transient Thermal Impedance θj-c（℃/W） Per one element Tj＝25℃ start ６０００ ２π θ：Conduction Angle ７０ ６０ ３ ０゜ ５０ ４０ ０ DC ２ ０゜ １ ８ ０゜ ０゜ １ ６ ０゜ ９ １００ ２００ ３００ ４００ ５００ ６００ ７００ ８００ ９００ Average On-State Current（A） Surge On-State Current Rating （Non-Repetitive） １００００ π θ 360゜ ８０ Average On-State Current（A） Surge On-State Current（A） １． ５ On-State Voltage（V） １０００ １２０００ １ Gate Current（mA） Per one element Power Dissipation（W） ５０００ Allowable Case Temperature（℃） １２００ ２０ On-State Current（A） Pe ak Ga te Po Av we era （ r ge 15 Ga W te ） Po we （ r5 W） ２０ Peak Gate Current（5A） Gate Voltage（V） ５０ On-State Characteristics ０． １ Transient Thermal Impedance Per one element ０． ０８ ０． ０６ Junction to Case ０． ０４ ０． ０２ ０ -３ １０ １０-２ １０-１ １００ Time t（sec） １０１ １０２