THYRISTOR MODULE（ISOLATED MOLD TYPE） SG25AA UL:E76102 （M） SG25AA is an isolated molded thyristor which is suitable fora wide range of industrial and home electronics uses. SG25AA uses highly relible glass passivation. 39.2 MAX 2-φ4.2±0.1 ● IT(AV)=25A （K） （G） A：TAB250 K：TAB250 20.1 MAX 21.6 MAX 30.0±0.1 13.9 G：TAB187 ＃250 ＃180 φ1.3（G） 7.95±0.15 6.35±0.15 φ1.65（T1.T1） A G 2.6 K 8.2 MAX 22.5 MAX Surge Capability ● Tab terminals for easy wiring. 10.8 （A） 23.0 MAX ● high Unit：A ■Maximum Ratings Symbol Ratings Item SG25AA20 SG25AA40 SG25AA60 Unit VRRM Repetitive Peak Reverse Voltage 200 400 600 V VRSM Non-Repetitive Peak Reverse Voltage 240 480 720 V VDRM Repetitive Peak Off-State Voltage 200 400 600 V Symbol Item IT（AV） IT（RMS） ITSM I2t Conditions Ratings Unit Average On-State Current Single phase, half wave, 180°conduction, Tc：70℃ 25 A R.M.S. On-State Current Single phase, half wave, 180°conduction, Tc：70℃ 39 A Surge On-State Current 1 ／2cycle, I2t 2∼10ms 50Hz/60Hz, peak value, non-repetitive 450/500 1040 A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 1 W IFGM Peak Gate Current VFGM Peak Gate Voltage(Forward) VRGM Peak Gate Voltage(Reverse) di／dt Critical Rate of Rise of On-State Current IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝1A/μs VISO Isolation Breakdown Voltage (R.M.S.) A.C.1minute Tj Tstg 3 A 10 V 5 V 100 A /μs 2500 V Operating Junction Temperature −40 to ＋125 ℃ Storage Temperature −40 to ＋125 ℃ 1.5（15） N･ｍ （㎏f･B） 23 g Mounting Torque（M4） Recommended Value 1.0-1.4（10-14） Mass ■Electrical Characteristics Symbol Item Conditions IDRM Repetitive Peak Off-State Current, max. at IRRM Ratings Unit single phase, half wave, Tj＝125℃ 5 mA Repetitive Peak Reverse Current, max. at VDRM, single phase, half wave, Tj＝125℃ 5 mA VDRM, VTM Peak On-State Voltage, max. On-State Current 78A, Tj＝25℃ Inst. measurement 1.40 V IGT／VGT Gate Trigger Current/Voltage, max. Tj＝25℃，IT＝1A，VD＝6V VGD Non-Trigger Gate, Voltage. min. Tj＝125℃，VD＝1／2VDRM 40/3 0.2 mA/V V tgt Turn On Time, max. IT＝25A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝1A/μs 10 μs 100 V/μs 30 mA 1.6 ℃/W dv／dt IH Critical Rate of Rise of Off-State Voltage, min. Tj＝125℃, Holding Current, typ. Tj＝25℃ Rth（j-c） Thermal Impedance, max. SanRex VD＝2／3VDRM, Junction to case Exponential wave. ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] ;; ;; SG25AA ２ Gate Characteristics ２ 25℃ １００ Ga te −40℃ Po we （ r 1W 125℃ ） ５ ２ On-State Current（A） Av er ag e P Po eak we Ga （ t r 10 e W ） Peak Gate Current（3A） ５ ５ ２ １０２ ５ ２ １０１ Maximum Gate Voltage that will not trigger any unit −１ １０ １ １０ ２ ５ １０２ ２ １０３ ５ ２ ５ ０ ５ １ １６０ 2 。 360 １２０ θ＝180゜ θ＝120゜ θ＝90゜ θ＝60゜ θ＝30゜ ２０ １００ 2 。 360 １０ : Conduction Angle １０ ２０ : Conduction Angle ３０ ４０ ８０ ６０ θ＝60゜ θ＝120゜ θ＝90゜ θ＝180゜ θ＝30゜ ４０ ５０ ０ １０ Average On-State Current（A） ２０ D.C. ３０ ４０ ５０ Average On-State Current（A） Ambient Temperature Average On-State （Single phase full wave） ６００ Surge On-State Current Rating （Non-Repetitive） Surge On-State Current（A） Average On-State Current（A） ６ Per one element １４０ D.C. ０ Rth：2.0℃/W Rth：1.0℃/W Rth：0.5℃/W Tj＝25℃ start ５００ ２４ ４００ ２０ Rth：3.0℃/W ３００ １２ ２０ ４０ ６０ ８０ １００ １２０ １４０ １６０ Ambient Temperature（℃） Transient Thermal Impedance ５ １０−２ ２ ５ １０−１ ２ ５ １００ 1.6 １． ２ 1.2 ０． ８ F-40 Self Convection 0． ４ ５． ０ ４． ０ ０ ３． ０ F-60 Self Convection F-４０(3m/s) ２． ０ ３． ０ F-６０(3m/s) ２． ０ Junction to case １． ０ １． ０ ５ １０1 ２ ５ １０２ ２ Time t（sec） ０ ０ １０ ２ ５ １０1 ２ Time（cycles） １． ６ ０ ０ １０ ２ ５0Hz １００ ４ １０−３ ２ 60Hz ２００ ８ ０ ０ Transient Thermal Impedance θj-c（℃/W） ５ Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） ３０ １６ 4 Average On-State Current Vs Power Dissipation （Single phase half wave） ４０ ２８ ３ On-State Voltage（V） ５０ ３２ ２ Gate Current（mA） Allowable Case Temperature（℃） Power Dissipation（W） ６０ On-State Voltage max Peak Forward Gate Voltag（10V） １０１ Gate Voltage（V） １０３ ５ １０３ ２ ５ １０４ ５ １０２