Ordering number:ENN2854 NPN Triple Diffused Planar Silicon Transistor 2SC4423 400V/12A Switching Regulator Applications Features Package Dimensions · High breakdown voltage, high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating easy mounting. unit:mm 2039D [2SC4423] 16.0 3.4 5.6 2.0 21.0 22.0 5.0 8.0 3.1 2.0 20.4 4.0 2.8 2.0 1.0 0.6 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML 3.5 1 5.45 Specifications 5.45 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol Ratings Unit 500 V 400 V VEBO IC 7 V 12 A 25 A ICP Base Current Conditions VCBO VCEO PW≤300µs, duty cycle≤10% IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 4 A 3 W 55 W 150 ˚C –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=400V, IE=0 10 µA Emitter Cutoff Current IEBO VEB=5V, IC=0 10 µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13004TN (KT)/D1898HA (KT)/9288MO, TS No.2854–1/4 2SC4423 Continued from preceding page. Parameter Symbol Base-to-Emitter Saturation Voltage VCE=5V, IC=1.6A 15 VCE=5V, IC=8A 10 hFE3 VCE(sat) VBE(sat) VCE=5V, IC=10mA 10 fT VCE=10V, IC=1.6A Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time tstg tf Fall Time Unit 50 0.8 IC=8A, IB=1.6A 1.5 V(BR)EBO IE=1mA, IC=0 VCEX(sus) IC=6A, IB1=0.6A, IB2=–2.4A, L=500µH, Clamped ton IC=10A, IB1=2A, IB2=–4A, RL=20Ω, VCC=200V Collector-to-Emitter Sustain Voltage max IC=8A, IB=1.6A Cob VCB=10V, f=1MHz V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE=∞ Collector-to-Base Breakdown Voltage typ hFE2 Gain-Bandwidth Product Output Capacitance min hFE1* DC Current Gain Collector-to-Emitter Saturation Voltage Ratings Conditions V V 20 MHz 160 pF 500 V 400 V 7 V 400 V IC=10A, IB1=2A, IB2=–4A, RL=20Ω, VCC=200V IC=10A, IB1=2A, IB2=–4A, RL=20Ω, VCC=200V 0.5 µs 2.5 µs 0.3 µs * : The hFE1 of the 2SC4423 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. Rank L M N hFE 15 to 30 20 to 40 30 to 50 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% IB2 INPUT OUTPUT RB VR RL + 50Ω + 100µF 470µF VBE= --5V IC -- VCE VCE=5V 12 Collector Current, IC – A 16 IC -- VBE(on) 14 2000mA 1800mA 1600mA 1400mA 1200mA 1000mA 800mA 600mA 12 400mA 8 200mA 10 8 Ta= 120 °C 25°C --40°C 20 Collector Current, IC – A VCC=200V 6 4 4 2 IB=0 0 0 2 4 6 8 0 10 0 Collector-to-Emitter Voltage, VCE – V ITR06810 hFE -- IC 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-to-Emitter ON Voltage, VBE(on) – V ITR06811 VCE(sat) -- IC 3 VCE=5V IC / IB=5 2 Collector-to-Emitter Saturation Voltage, VCE (sat) – V 100 DC Current Gain, hFE 7 5 Ta=120°C 3 25°C 2 --40°C 10 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC – A 3 5 7 10 2 ITR06812 1.0 7 5 3 2 °C 120 Ta= C 25° °C 4 -- 0 0.1 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC – A 3 5 7 10 2 ITR06813 No.2854–2/4 2SC4423 VBE(sat) -- IC 10 3 2 Ta= --40°C 7 25°C 120°C 5 3 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 1.0 7 5 2 7 0.1 m s 3 2 s era Di lim ssipa tion ite tion d 5 s 1.0 S/ B lim d Tc=25°C Single pulse 2 3 5 7 3 5 7 2 10 ITR06815 Tc=25°C IB2= --2.4A Const L=100µH ICP=25A 10 7 5 3 2 2 0.1 10 2 3 5 7 100 2 3 5 7 1000 5 Collector-to-Emitter Voltage, VCE – V ITR06816 Rth(t) -- t 5 7 2 100 3 5 7 Collector-to-Emitter Sustain Voltage, VCE(sus) – V Tc=25°C 1000 ITR06817 PC -- Ta 60 3 2 Collector Dissipation, PC – W Transient Thermal Resistance, Rth(t) – °C/W 2 3 ite 0.1 7 1.0 1.0 7 5 5 3 2 5 Collector Current, IC – A 2 <50µs 10 op 0µ DC 1m 10 3 Reverse Bias A S O 3 10 IC=12A 2 5 ICP=25A 5 3 tf 0.1 Forward Bias A S O 3 2 ton 3 5 7 10 2 ITR06814 Collector Current, IC – A 100 5 tstg 3 7 5 2 0.01 Collector Current, IC – A Switching Time, SW Time – µs 5 VCC=200V IC=5IB1= --2.5IB2 R load 7 Collector Current, IC – A Base-to-Emitter Saturation Voltage, VBE (sat) – V 7 1.0 SW Time -- IC 10 IC / IB=5 1.0 7 5 3 2 0.1 7 5 3 2 0.1 50 40 30 20 10 No heat sink 3 0 2 3 5 1.0 2 3 5 10 2 3 Time, t – ms 5 100 2 3 5 1000 ITR06818 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 ITR06819 No.2854–3/4 2SC4423 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2004. Specifications and information herein are subject to change without notice. PS No.2854–4/4