SANYO 2SK2951

Ordering number : ENN6916
2SK2951
N-Channel Silicon MOSFET
2SK2951
Ultrahigh-Speed Switching Applications
Features
•
•
Package Dimensions
Low ON-resistance.
Ultrahigh-speed switching.
unit : mm
2062A
[2SK2951]
4.5
1.6
0.4
1.0
2.5
4.25max
1.5
0.5
3
1.5
2
1
0.4
3.0
1 : Gate
2 : Drain
3 : Source
0.75
SANYO : PCP
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
200
V
Gate-to-Source Voltage
VGSS
±20
V
1
A
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (250mm2✕0.8mm)
4
A
1.5
W
Allowable Power Dissipation
PD
3.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
min
typ
ID=1mA, VGS=0
VDS=200V, VGS=0
VGS=±15V, VDS=0
200
IDSS
IGSS
VDS=10V, ID=1mA
VDS=10V, ID=0.5A
2.0
Forward Transfer Admittance
VGS(off)
yfs
Static Drain-to-Source On-State Resistance
RDS(on)
ID=0.5A, VGS=10V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
Conditions
0.4
max
V
100
µA
±10
µA
3.0
V
3.5
Ω
0.8
S
2.5
Marking : KS
Unit
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20101 TS IM TA-1034 No.6916-1/4
2SK2951
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Input Capacitance
Ciss
pF
Coss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
60
Output Capacitance
18
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
7
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
5
ns
Rise Time
tr
td(off)
See specified Test Circuit
10
ns
See specified Test Circuit
30
ns
tf
See specified Test Circuit
18
IS=1A, VGS=0
1.0
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
VSD
ns
1.5
V
Switching Time Test Circuit
VDD=100V
VIN
10V
0V
ID=0.5A
RL=200Ω
VIN
PW=10µs
D.C.≤1%
VOUT
D
G
50Ω
S
VGS=4V
8V
5°C
5V
6V
1.8
20V
0.6
0.4
VDS=10V
°C
75
25
Drain Current, ID -- A
1.6
10V
0.8
ID -- VGS
2.0
°C
ID -- VDS
1.0
Drain Current, ID -- A
2SK2951
Tc= --2
P.G
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.2
0
0
0
1
2
3
4
Drain-to-Source Voltage, VDS -- V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V
18
20
IT02857
3
4
5
6
7
8
9
10
IT02856
RDS(on) -- Tc
6.0
VGS=10V
ID=0.5A
5.5
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
5.0
2
Gate-to-Source Voltage, VGS -- V
Tc=25°C
ID=0.5A
5.5
1
IT02855
RDS(on) -- VGS
6.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
--60
--40
--20
0
20
40
60
80
100
Case Temperature, Tc -- °C
120
140
160
IT02858
No.6916-2/4
2SK2951
Tc=
7
5
3
2
--25
°C
75°C
°C
25
0.1
7
5
3
5
7 0.1
2
3
5 7 1.0
2
3
5
0.1
7
5
7 10
0
Switching Time, SW Time -- ns
3
2
Coss
Crss
3
2
40
60
80
100
Drain-to-Source Voltage, VDS -- V
120
µs
10
ID=1A
0µ
1m
s
s
10
ms
5
DC
2
op
Operation in this
area is limited by RDS(on).
0.1
era
tio
n
5
2
Tc=25°C
Single pulse
0.01
2
3
5
0.8
0.9
1.0
1.1
IT02860
td(off)
3
2
tf
tr
10
7
td(on)
5
3
2
2
7
5
3
2
1.0
Drain Current, ID -- A
Allowable Power Dissipation, PD -- W
10
2
0.7
5
3
IT02862
PD -- Ta
2.0
IDP=4A
5
0.6
VDD=100V
VGS=10V
IT02861
ASO
10
0.5
SW Time -- ID
1.0
0.1
1.0
20
0.4
7
Ciss
0
0.3
100
3
2
10
7
5
0.2
Diode Forward Voltage, VSD -- V
f=1MHz
100
7
5
0.1
IT02859
Ciss, Coss, Crss -- VDS
1000
7
5
Ciss, Coss, Crss -- pF
3
2
0.01
2
Drain Current, ID -- A
Drain Current, ID -- A
1.0
7
5
Tc=7
0.01
0.01
1.8
1.6
1.5
1.4
M
ou
nte
do
na
1.2
ce
ram
1.0
ic
bo
ard
0.8
(2
50
mm
0.6
2
✕0
.8m
0.4
m)
0.2
0
7
2
10
3
5
7 100
Drain-to-Source Voltage, VDS -- V
2
3
IT02900
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02863
PD -- Tc
5.0
Allowable Power Dissipation, PD -- W
3
2
3
2
3
2
1.0
VGS=0
5°C
25°C
1.0
Forward Current, IF -- A
Forward Transfer Admittance, yfs -- S
3
2
IF -- VSD
10
7
5
VDS=10V
7
5
--25°C
yfs -- ID
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT02864
No.6916-3/4
2SK2951
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2001. Specifications and information herein are subject
to change without notice.
PS No.6916-4/4