Ordering number:EN4657 FP303 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions · Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting. · The FP303 is composed of chips equivalent to the 2SD1623 and SB05-05CP, which are placed in one package. unit:mm 2099A [FP303] 1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector SANYO:PCP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage VCBO VCEO 60 V 50 V VEBO IC 6 V 2 A ICP 4 Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 400 Mounted on ceramic board (250mm2×0.8mm) A mA 0.8 W 150 ˚C –55 to +150 ˚C VRRM VRSM 50 V 55 V IO 500 mA [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg Electrical Connection 50Hz sine wave, 1 cycle 5 A –55 to +125 ˚C –55 to +125 ˚C Continued on next page. 1:Base 2:Collector 3:Emitter Common 4:Cathode 5:Anode 6:Cathode 7:Collector (Top View) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/N2394TS (KOTO) B8-0025 No.4657-1/4 FP303 Continued from preceding page. Electrical Characteristics at Ta=25˚C Parameter Symbol Conditons Ratings min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE1 Gain-Bandwidth Product hFE2 fT Output Capacitance Cob C-E Saturation Voltage B-E Saturation Voltage VCE(sat) VBE(sat) VCB=50V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=1.5A 140 0.1 µA 0.1 µA 560 40 VCE=10V, IC=50mA 150 MHz VCE=10V, f=1MHz IC=1.0A, IB=50mA 0.15 0.4 V IC=1.0A, IB=50mA 0.9 1.2 V 12 pF C-B Breakdown Voltage V(BR)CBO IC=10µA, IE=0 60 V C-E Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ V(BR)EBO IE=10µA, IC=0 50 V E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time 6 V ton tstg See specified Test Circuit 60 ns See specified Test Circuit 550 ns tf See specified Test Circuit 30 ns [SBD] Reverse Voltage VR VF IR=200µA IF=500mA VR=25V Interterminal Capacitance IR C Reverse Recovery Time trr Forward Voltage Reverse Current Thermal Resistance Rthj-a VR=10V, f=1MHz IF=IR=100mA, See sepcified Test Circuit. Mounted on ceramic board (250mm2×0.8mm) 50 V 0.55 V 50 µA 22 pF 10 170 ns ˚C/W Marking:303 No.4657-2/4 FP303 No.4657-3/4 FP303 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4657-4/4