2N2904 MECHANICAL DATA Dimensions in mm (inches) GENERAL PURPOSE PNP TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) FEATURES 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 5 .0 8 (0 .2 0 0 ) ty p . 1 2 3 • CECC SCREENING OPTIONS 2 .5 4 (0 .1 0 0 ) • LOW NOISE AMPLIFIER 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) APPLICATIONS: 4 5 ° • GENERAL PURPOSE TO–39 METAL PACKAGE • HIGH SPEED SATURATED SWITCHING Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC PD PD TJ , TSTG Semelab plc. Collector – Emitter Voltage Collector – Base Voltage Emmiter – Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 40V 60V 5V 600mA 600mW 3.43mW/ °C 3W 17.2mW / °C –65 to +200°C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 11/98 2N2904 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS V(BR)CEO Collector–Emitter Breakdown Voltage1 IC = 10mA IB = 0 40 V(BR)CBO Collector – Base Breakdown Voltage IC = 10µA IE = 0 60 V(BR)EBO Emitter – Base Breakdown Voltage IC = 0 IE = 10µA0 5.0 ICEX Collector Cut-off Current VCE = 30V VBE = 0.5V VCB = 50V IE = 0 VCB = 50V IE = 0 ICBO Collector Cut-off Current V 50 0.02 20 TA = 150°C IB Base Current nA VCE = 30V VBE = 0.5V 50 IC = 0.1mA VCE = 10V 20 IC = 1mA VCE = 10V 25 IC = 10mA VCE = 10V 35 IC = 500mA VCE = 10V1 20 IC = 150mA IB = 15mA 0.4 IC = 500mA IB = 50mA 1.6 IC = 150mA IB = 15mA1 1.3 IC = 500mA IB = 50mA 2.6 µA nA ON CHARACTERISTICS hFE DC Current Gain — ELECTRICAL CHARACTERISTICS VCE(sat) Collector – Emitter Saturation Voltage1 VBE(sat) Base – Emitter Saturation Voltage V V SMALL SIGNAL CHARACTERISTICS ft Current Gain Bandwidth Product 2 Cobo Output Capacitance Cibo Input Capacitance VCE = 20V IC = 50mA f = 100MHz VCB = 10V MHz 200 IE = 0 8.0 f = 100kHz VBE = 2..0V pF IC = 0 30 f = 100kHz SWITCHING CHARACTERISTICS ton Turn–On Time td Delay Time tr RiseTime toff Turn–Off Time ts Sorage Time tf FallTime VCC = 30V IC = 150mA IB1 = 15mA VCC = 6V IC = 150mA IB1 = IB2 =15mA 26 45 6.0 10 20 40 70 100 50 80 20 30 ns ns 1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2% 2) ft is defined as the frequency at which |hfe| extrapolates to untity. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 11/98