2N2907AQ–LCC20 MECHANICAL DATA Dimensions in mm (inches) SURFACE MOUNT QUAD PNP TRANSISTOR 5 .0 8 (.2 0 0 ) 1 .2 7 (.0 5 0 ) R E F 1 .2 7 (.0 5 0 ) R E F 5 .0 8 (.2 0 0 ) FEATURES P IN 1 IN D E X 1 1 .9 1 (.0 7 5 ) • FOUR INDEPENDENT TRANSISTORS IN A 0.35 INCH SQUARE CERAMIC PACKAGE 0 .6 4 (.0 2 5 ) R E F 1 .9 1 (.0 7 5 ) 1 .6 0 (.0 6 3 ) 2 .1 6 (.0 8 5 ) 1 8 • SURFACE MOUNTABLE • HERMETICALLY SEALED PACKAGE • SCREENING OPTIONS AVAILABLE 1 4 1 3 2 0 DESCRIPTION 1 9 4 The 2N2907AQ–LCC20 is a 20 pad, hermetically sealed, Ceramic Surface Mount Transistor array, consisting of four 2N2907A silicon PNP transistor die. 8 8 .8 9 (.3 5 0 ) S Q PACKAGE LCC20 Pin 1 = n/c Pin 6 = n/c Pin 11 = n/c Pin 2 = Collector1 Pin 7 = Emitter 2 Pin12 =Collector 3 Pin 17 = Emitter 4 Pin 3 = n/c Pin 8 = Base 2 Pin13 = n/c Pin 18 = Base 4 Pin 4 = Base 1 Pin 9 = n/c Pin 14 = Base 3 Pin 19 = n/c Pin 5 = Emitter 1 Pin10 =Collector 2 Pin 15 = Emitter 3 Pin 16 = n/c Pin 20 =Collector 4 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IV PD PD TJ , TSTG Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Isolation Voltage Total Device Dissipation @ TA = 25°C (four devices driven equally) Total Device Dissipation@ TS(1) = 25°C (four devices driven equally) Operating and Storage Junction Temperature Range Soldering Temperature (vapor phase reflow for 30 sec) Soldering Temperaure (heated collect for 5 sec) Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 60V 60V 5V 600mA 500VDC 1W 2W(2) –65 to +200°C 215°C 260°C Prelim.6/99 2N2907AQ–LCC20 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO OFF CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA IB = 0 60 V V(BR)CBO Collector – Base Breakdown Voltage IC = 10mA IE = 0 60 V V(BR)EBO Emitter – Base Breakdown Voltage IE = 10mA IC = 0 5 V ICBO Collector – Base Cut-off Current IE = 0 VCB = 50V 10 nA TA = 150°C 10 m IEBO Emitter Base Cut-off Current IC = 0 VEB = 3.5V 50 nA IC = 150mA IB = 15mA(3) 0.4 V IC = 500mA IB = 50mA(3) 1.60 IC = 150mA IB = 15mA(3) 1.3 IC = 500mA IC = 50mA(3) 2.6 IC = 0.1mA VCE = 10V 75 IC = 1mA VCE = 10V 100 IC = 10mA VCE = 10V 100 IC = 150mA(3) VCE = 10V 100 IC = 500mA(3) VCE = 10V 50 A ON CHARACTERISTICS VCE(sat) Collector – Emitter Saturation Voltage VBE(sat) Base – Emitter Saturation Voltage hFE Forwared Current Transfer Ratio IC = 10mA VCE = 10V TA = –55°C V 450 300 — 50 SMALL SIGNAL CHARACTERISTICS hfe Forward Current Transfer Ratio IC = 1mA VCE = 10V f = 1kHz lhfel Forward Curent Transfer Ratio IC = 50mA VCE = 20V f = 100MHz 100 — 2 Cobo Open Circuit Output Capacitance VCB = 10V 100kHz £ f £ 1MHz 8 Cibo 30 Input Capacitance(output open) VEB = 2V 100kHz £ f £ 1MHz pF — SWITCHING CHARACTERISTICS ton Turn-On Time VCC = 30V IC 150mA IB1 = 15mA 45 toff Turn-Off Time VCC = 30V IC 150mA IB1 = IB1=15mA 300 ns NOTES: 1) Ts = Substrate Temperatue that the chip carrier is mounted on. 2) Derate Linearly 11.4mW/°C above 25°C. This rating is proveded as an aid to designers. It is dependent upon mounting material and methods and is not measureable as an outgoing test. 3) Pulse Test Pulse Wide £ 300ms , Duty Cycle Semelab plc. £ 2% Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.6/99