2N2916DCSM DUAL NPN PLANAR TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 1 .4 0 ± 0 .1 5 (0 .0 5 5 ± 0 .0 0 6 ) 0 .6 4 ± 0 .0 6 (0 .0 2 5 ± 0 .0 0 3 ) 1 .6 5 ± 0 .1 3 (0 .0 6 5 ± 0 .0 0 5 ) 2 .5 4 ± 0 .1 3 (0 .1 0 ± 0 .0 0 5 ) ! " A # $ 6 .2 2 ± 0 .1 3 (0 .2 4 5 ± 0 .0 0 5 ) 0 .2 3 ra d . (0 .0 0 9 ) A = 4 .3 2 ± 0 .1 3 (0 .1 7 0 ± 0 .0 0 5 ) 2 .2 9 ± 0 .2 0 (0 .0 9 ± 0 .0 0 8 ) FEATURES 1 .2 7 ± 0 .1 3 (0 .0 5 ± 0 .0 0 5 ) • Hermetic Ceramic Surface Mount Package • CECC Screening Options LCC2 PACKAGE • Space Quality Levels Options Underside View PAD 1 – Collector 1 PAD 4 – Collector 2 PAD 2 – Base 1 PAD 5 – Emitter 2 PAD 3 – Base 2 PAD 6 – Emitter 1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD Collector – Base Voltage Collector – Emitter Voltage 1 Emitter – Base Voltage Continuous Collector Current Total Device Dissipation TSTG TL Storage Temperature Range Lead temperature (Soldering, 10 sec.) TAMB = 25°C Derate above 25°C EACH SIDE TOTAL DEVICE 45V 45V 6V 30 300mW 500mW 1.72mW / °C 2.86W / °C –65 to 200°C 300°C NOTES 1. Base – Emitter Diode Open Circuited. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2747 Issue 1 2N2916DCSM ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter Test Conditions 1 Min. Typ. Max. INDIVIDUAL TRANSISTOR CHARACTERISTICS IC = 10mA V(BR)CBO Collector – Base Breakdown Voltage IE = 0 45 V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA IB = 0 45 IE = 10mA IC = 0 6 VCB = 45V IE = 0 10 TA = 150°C 10 V V(BR)EBO Emitter – Base Breakdown Voltage ICBO Collector Cut-off Current ICEO Collector Cut-off Current VCE = 5V IB = 0 2 IEBO Emitter Cut-off Current VEB = 5V IC = 0 2 VCE = 5V IC = 10mA 150 TA = –55°C 30 VCE = 5V IC = 100mA 225 VCE = 5V IC = 1mA 300 hFE DC Current Gain VCE = 5V IC = 100mA 0.70 VCE(sat) Collector – Emitter Saturation Voltage IB = 100mA IC = 1mA 0.35 hib Small Signal Common – Base VCB = 5V IC = 1mA Input Impedance f = 1kHz Small Signal Common – Base VCB = 5V Output Admittance f = 1kHz Small Signal Common – Base VCE = 5V Current Gain f = 20MHz Common – Base Open Circuit VCB = 5V Output Capacitance f = 140kHz to 1MHz |hfe| Cobo TRANSISTOR MATCHING CHARACTERISTICS VCE = 5V hFE1 Static Forward Current Gain Balance hFE2 See Note 2. Ratio |VBE1 – VBE2| Base – Emitter Voltage Differential VCE = 5V IC = 1mA IC = 500mA IC = 100mA IC = 100mA VCE = 5V IC = 10mA to 1mA VCE = 5V IC = 100mA Base – Emitter Voltage TA1 = 25°C TA2 = –55°C Differential Change With VCE = 5V IC = 100mA Temperature TA1 = 25°C TA2 = 125°C |D(VBE1 – VBE2)DTA| 0.9 nA V 32 W 1 mmho — 3 IE = 0 mA — Base – Emitter Voltage hob nA 600 VBE 25 Unit 6 pF 1 — 3 5 mV 0.8 mV 1 * Pulse Test: tp = 300ms , d £ 1%. NOTES 1) Terminals not under test are open circuited under all test conditions. 2) The lower of the two readings is taken as hFE1. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2747 Issue 1