SEME-LAB 2N3209CSM

SEME
2N3209CSM
LAB
HIGH SPEED, PNP,
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA
Dimensions in mm (inches)
FEATURES
2.54 ± 0.13
(0.10 ± 0.005)
0.51 ± 0.10
(0.02 ± 0.004)
• SILICON PLANAR EPITAXIAL PNP TRANSISTOR
0.31 rad.
(0.012)
3
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
2
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
0.31 rad.
(0.012)
A = 1.02 ± 0.10
(0.04 ± 0.004)
• CECC SCREENING OPTIONS
A
1.40
(0.055)
max.
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
Underside View
APPLICATIONS:
PAD 1
PAD 2
PAD 3
For high reliablitity general purpose
applications requiring small size and low
weight devices.
Base
Emitter
Collector
SOT23 CERAMIC (CSM)
LCC1 PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
PD
Rja
Tj
Tstg
Semelab plc.
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Total Device Dissipation
Derate above 50°C
Thermal Resistance Junction to Ambient
Max Junction Temperature
Storage Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
–20V
–20V
–4V
–200mA
300mW
2.20mW / °C
420°C / W
200°C
–55 to 200°C
Prelim. 12/93
SEME
2N3209CSM
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
VCEO(sus)*
Collector – Emitter Sustaining Voltage
IC = 10mA
-20
V
V(BR)CBO*
Collector – Base Breakdown Voltage
IC = 10µA
-20
V
V(BR)EBO*
Emitter – Base Breakdown Voltage
IE = 10µA
IC = 0
-4
V
VCE = 10V
VBE = 0
VCE = 10V
VBE = 0
ICES*
Collector Cut-off Current
TC = 125°C
VCE(sat)*
VBE(sat)*
hFE*
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
DC Current Gain
80
nA
10
µA
IC = 10mA
IB = 1mA
0.15
IC = 30mA
IB = 3mA
0.20
IC = 100mA
IB = 10mA
0.60
IC = 10mA
IB = 1mA
0.78
0.98
IC = 30mA
IB = 3mA
0.85
1.2
IC = 100mA
IB = 10mA
IC = 10mA
VCE = 0.3V
25
IC = 30mA
VCE = 0.5V
30
IC = 100mA
VCE = 1V
15
VCE = 0.5V
12
Tamb = –55°C IC = 30mA
V
V
1.7
120
—
* Pulse test tp = 300µs , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
fT
Transition Frequency
IC = 30mA
VCE = 10V
f = 100MHz
400
MHz
CEBO
Capacitance
VEB = 0.5V
IC = 0
f = 1.0MHz
6.0
pF
CCBO
Input Capacitance
VCB = 5V
IE = 0
f = 1.0MHz
5.0
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
ton
Turn-on Time
toff
Turn-off Time
Semelab plc.
Test Conditions
VCC = 2V
IC = 30mA
VCC = 2V
IB1 = 1.5mA
IC = 30mA
IB1 = IB2 = 1.5mA
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Min.
Typ.
Max. Unit
60
ns
90
ns
Prelim. 12/93