SEME 2N3209DCSM LAB DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm (inches) FEATURES 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A= 1.27 ± 0.13 (0.05 ± 0.005) LCC2 PACKAGE Underside View PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 4.32 ± 0.13 (0.170 ± 0.005) 2 • SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS AVAILABLE • SPACE QUALITY LEVELS OPTIONS • HIGH SPEED SATURATED SWITCHING APPLICATIONS: For high reliablitity general purpose applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) PER SIDE VCBO VCEO VEBO IC PD PD Rja Tj Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk TOTAL –20V –20V –4V –200mA 300mW 500mW 2mW / °C 3.3mW / °C 420°C / W 250°C / W 200°C –65 to 200°C Prelim. 2/00 SEME 2N3209DCSM LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 10mA -20 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 10mA -20 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 10mA IC = 0 -4 V VCE = 10V VBE = 0 VCE = 10V VBE = 0 ICES* Collector Cut-off Current TC = 125°C VCE(sat)* VBE(sat)* hFE* Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage DC Current Gain 80 nA 10 m IC = 10mA IB = 1mA 0.15 IC = 30mA IB = 3mA 0.20 IC = 100mA IB = 10mA 0.60 IC = 10mA IB = 1mA 0.78 0.98 IC = 30mA IB = 3mA 0.85 1.2 IC = 100mA IB = 10mA IC = 10mA VCE = 0.3V 25 IC = 30mA VCE = 0.5V 30 IC = 100mA VCE = 1V 15 VCE = 0.5V 12 Tamb = –55°C IC = 30mA A V V 1.7 120 — * Pulse test tp = 300ms , d £ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 30mA VCE = 10V f = 100MHz 400 MHz CEBO Capacitance VEB = 0.5V IC = 0 f = 1.0MHz 6.0 pF CCBO Input Capacitance VCB = 5V IE = 0 f = 1.0MHz 5.0 pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ton Turn-on Time toff Turn-off Time Semelab plc. Test Conditions VCC = 2V IC = 30mA VCC = 2V IB1 = 1.5mA IC = 30mA IB1 = IB2 = 1.5mA Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Min. Typ. Max. Unit 60 ns 90 ns Prelim. 2/00