2N3439CSM4R 2N3440CSM4R HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES • Hermetic Ceramic 4 pin Surface Mount Package - LCC3 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) • High Voltage Small Signal Type 0.23 rad. (0.009) 3 4 1.02 ± 0.20 (0.04 ± 0.008) 2 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) • Full Screening Options Available 0.23 min. (0.009) • “R” Denotes Reverse Pinning APPLICATIONS: 2.03 ± 0.20 (0.08 ± 0.008) LCC3 PACKAGE Underside View PAD 1 – Collector PAD 3 – N/C PAD 2 – Emitter PAD 4 – Base The 2N3439CSM4 and 2N3440CSM4 are high voltage silicon epitaxial planar transistors mounted in the popular 4 pin ceramic surface mount hermetically sealed package. These products are specifically intended for use in High reliability systems and can be ordered with a full range of screening options from standard Militar y (equivalent to CECC Full Assessment Level) through all options up to full space flight level. ABSOLUTE MAXIMUM RATINGS VCBO VCEO VEBO IC IB Ptot Tstg Tj Semelab plc. Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current. Base Current. Total Power Dissipation at Tamb = 25°C with product mounted on a suitable PCB to provide a heat path. Storage Temperature. Maximum Junction Temperature. 2N3439CSM4 2N3440CSM4 450V 350V 7V 1A 0.5A 0.5W 300V 250V 7V 1A 0.5A 0.5W –65 to +200°C +200°C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 11/98 2N3439CSM4R 2N3440CSM4R ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus)* Test Conditions Collector – Emitter Sustaining Voltage IC = 50mA (IB = 0) ICEX* Min. 2N3439CSM4R 350 2N3440CSM4R 250 Typ. Max. Unit V Collector Cut-off Current 2N3439CSM4R 500 (VBE = –1.5V) 2N3440CSM4R 500 Collector – Base Cut-off Current VCB = 360V 2N3439CSM4R 20 (IE = 0) VCB = 250V 2N3440CSM4R 20 Collector – Cut-off Current VCE = 300V 2N3439CSM4R 20 (IB = 0) VCE = 200V 2N3440CSM4R 50 IEBO* Emitter Cut-off Current (IC = 0) VEB = 6V 20 VCE(sat)* Collector – Emitter Saturation Voltage IC = 50mA IB = 4mA 0.5 VBE(sat)* Base – Emitter Saturation Voltage IC = 50mA IB = 4mA 1.3 hFE* DC Current Gain IC = 20mA VCE = 10V ICBO* ICEO* A m A m A m A V 40 — 2N3439CSM4R only IC = 20mA m VCE = 10V 30 * Pulse test tp = 300ms , d £ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions fT Transition Frequency IC = 10mA Cob Output Capacitance VCB = 10V hfe Small Signal Current Gain IC = 5mA Semelab plc. VCE = 10V f = 5MHz Min. Typ. 15 f = 10MHz VCE = 10V f = 1kHz Max. Unit MHz 10 pF 25 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 11/98