2N3738 MECHANICAL DATA Dimensions in mm 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 1 24.13 (0.95) 24.63 (0.97) POWER TRANSISTORS NPN SILICON FEATURES • Hermetically Packaged. • Low Saturation Voltage • High Gain 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 Package (TO-213AA) Pin 1 = Base Pin 2 = Emitter Case = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 250V VCEO Collector – Emitter Voltage (IB = 0) 225V VEBO Emitter – Base Voltage (IC = 0) 6V IC Collector Current 1A IC(PK) Peak Collector Current 2A IB Base Current 0.5A PD Total Device Dissipation at Tcase = 25°C 20W Derate 25°C Tstg Operating and Storage Temperature Range 0.133W/°C –65 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6051 Issue 1 2N3738 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEO(BR)* ELECTRICAL CHARACTERISTICS Collector– Emitter Breakdown Voltage IC = 5mA ICBO Collector Base Cut–Off Current VCB = 250V IE = 0 0.1 mA ICEO Collector Emiiter Cut–Off Current VCE = 125V IB = 0 0.25 mA VCE = 250V VBE(OFF) = 1.5V 0.5 mA 1.0 mA 0.1 mA 200 — ICEV Collector Cut–Off Current IB = 0 225 VCE = 125V VBE(OFF) = 1.5V TC = 100°C IEBO Emitter Base Cut–Off Current VEB = 6V V IC = 50mA VCE = 10V 30 IC = 100mA VCE = 10V 40 IC = 250mA VCE = 10V 25 VCE(sat)* Collector – Emitter Saturation Voltage IC = 250mA IB = 25mA 2.5 VBE(on)* Base – Emitter on Voltage IC = 100mA VCE = 10V 1.0 IC = 100mA VCE = 10V hFE* DC Current Gain V DYNAMIC CHARACTERISTICS fT Transition Frequency Cob Output Capacitance hfe Small Signal Current Gain f = 10MHz 10 VCB = 100V IE = 0 20 f = 100KHz IC = 100mA VCE = 20V f = 1KHz MHz 35 pF — * Pulse Width ≤ 300µs , Duty Cycle < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6051 Issue 1