SEME 2N3904 LAB GENERAL PURPOSE NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • CECC SCREENING OPTIONS 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia. • HIGH SPEED SATURATED SWITCHING 2.54 (0.100) Nom. 3 1 2 TO-18 METAL PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 60V VCEO Collector – Emitter Voltage 40V VEBO Emitter – Base Voltage 6V IC Collector Current PD Total Device Dissipation 200mA @ TA =25°C Derate above 25°C RqJA Thermal Resistance Junction – Ambient TSTG , TJ Operating and Storage Temperature Range Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 350mW 3.33mW / °C 300°C/W –55 to +175°C Prelim. 7/00 SEME 2N3904 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 1mA IB = 0 40 V(BR)CBO Collector – Base Breakdown Voltage 60 V(BR)EBO Emitter – Base Breakdown Voltage IE = 10mA IE = 0 IC = 0 6 IBL Base Cut-off Current VCE = 30V 50 ICEX Collector – Emitter Cut-off Current VEB = 3V 50 VCE(sat) Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* DC Current Gain IC = 10mA IB = 1mA 0.2 IC = 50mA IB = 5mA 0.3 IC = 10mA IB = 1mA IC = 50mA IB = 5mA VCE = 1V 0.65 Cob Output Capacitance Cib Input Capacitance hie Input Impedance hoe Output Admittance hre Voltage Feedback Ratio hfe Small Signal Current Gain NF Noise Figure VCE = 20V IC = 0.1mA 40 IC = 1mA 70 IC = 10mA 100 IC = 50mA 60 IC = 100mA 30 IC = 10mA f = 100MHz VCB = 5V 0.85 0.95 SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Current Gain Bandwidth Product nA IC = 10mA * Pulse Test: tp £ 300ms, d £ 2%. ft V 300 Typ. 4 pF 8 pF 1 10 kW 1 40 mhmos 0.5 8 x 10-4 100 400 — 5 dB IC = 0 f = 1MHz IC = 1mA f = 1kHz VCE = 5V f = 1kHz IC = 100mA RS = 1kW SWITCHING CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit td Delay Time VCC = 3V VBE = 0.5V 35 tr Rise Time IC = 10mA IB1 = 1mA 35 ts Storage Time VCC = 3V VBE = 0.5V 200 tf Fall Time IB1 = IB2 = 1mA Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk — MHz IE = 0 VCE = 10V V Max. Unit 300 f = 1MHz VBE = 0.5V V ns 50 Prelim. 7/00