2N4033CSM4 HIGH SPEED PNP MEDIUM VOLTAGE TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm (inches) FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) • CERAMIC SURFACE MOUNT HERMETIC PACKAGE 0.23 rad. (0.009) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) • LOW WEIGHT 0.23 min. (0.009) • SMALL FOOTPRINT • SCREENING OPTIONS AVAILABLE 2.03 ± 0.20 (0.08 ± 0.008) 1.02 ± 0.20 (0.04 ± 0.008) LCC3 PACKAGE Underside View PAD 1 – Collector PAD 3 – Emitter PAD 2 – N/C PAD 4 – Base ABSOLUTE MAXIMUM RATINGS Tcase = 25°c unless otherwise stated VCEO Collector – Emitter Voltage -80V VCBO Collector – Base Voltage -80V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -1A PD Total Device Dissipation at TA = 25°C Derate above 25°C Tstg Semelab plc. Operating and Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 400mW 2.28 mW/°C –55 to +200°C Prelim. 02/00 2N4033CSM4 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. ICBO Collector Cut Off Current VCB = -60V IEBO Emitter Cut Off Current VEB = -5V VCE(sat) Collector Emitter Saturation Voltage1 VBE(sat) Base Emitter Saturation Voltage1 TA = 150°C Typ. Max. Unit -50 nA -50 mA mA -10 IC = -150mA IB = -15mA -0.15 IC = -500mA IB = -50mA 0.50 IC = -150mA IB = -15mA -0.9 V -1.1 V VBE(on) Base Emitter on Voltage IC = -500mA V(BR)CEO Collector Emitter Breakdown Voltage IC = -10mA -80 V V(BR)CBO Collector Base Breakdown Voltage IC = -10mA -80 V V(BR)EBO Emitter Base Breakdown Voltage IE = -10mA -5.0 V IC = -100mA VCE = -0.5V1 V VCE = -5.0V @-55°C1 hFE DC Current Gain IC = -100mA VCE = -5.0V 40 75 IC = -100mA VCE = -5.0V1 100 IC = -500mA VCE = -5.0V1 70 -5.0V1 25 IC = -1.0A VCE = 300 — SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCE = -10V f = 1MHz 20 Cibo Input Capacitance VEB = -0.5V f = 1MHz 110 hfe Small Signal Gain IC = -50mA VCE = -10V f = 100MHz 1.5 5.0 pF — SWITCHING CHARACTERISTICS ton Turn On Time tf Fall Time ts Storage Time 1Pulse 100 IC = -500mA IB1=-IB2 = -50mA 50 ns 350 test tp = 300ms , d = 1% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 02/00