VISHAY VQ1001P

VQ1001J/P
Vishay Siliconix
Quad N-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V(BR)DSS Min (V)
rDS(on) Max (W)
VGS(th) (V)
ID (A)
1 @ VGS = 12 V
0.8 to 2.5
0.83
VQ1001P
1 @ VGS = 12 V
0.8 to 2.5
0.53
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
VQ1001J
30
Low On-Resistance: 0.85 W
Low Threshold: 1.4 V
Low Input Capacitance: 38 pF
Fast Switching Speed: 9 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Dual-In-Line
N
D1
1
14
D4
S1
2
13
S4
G1
3
12
G4
4
11
G2
5
10
G3
S2
6
9
S3
D2
7
8
D3
NC
N
Device Marking
Top View
N
VQ1001J
“S” fllxxyy
VQ1001P
“S” fllxxyy
NC
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
N
Top View
Plastic: VQ1001J
Sidebraze: VQ1001P
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
VQ1001J
Symbol
Single
VDS
30
VGS
VQ1001P
Continuous Drain Current (TJ = 150_C)
_
TA= 25_C
TA= 100_C
Pulsed Drain Currenta
Power Dissipation (Single)
Thermal Resistance, Junction-to-Ambient (Single)
Operating Junction and Storage Temperature Range
TA= 100_C
"30
Unit
V
"20
0.83
ID
IDM
TA= 25_C
Total Quad
PD
RthJA
TJ, Tstg
0.53
A
3
1.3
2
0.52
0.8
96
62.5
–55 to 150
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70219
S-04279—Rev. D, 16-Jul-01
www.vishay.com
11-1
VQ1001J/P
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typa
V(BR)DSS
VGS = 0 V, ID = 10 mA
30
45
VGS(th)
VDS = VGS, ID = 1 mA
0.8
1.5
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
VDS = 0 V, VGS = "16 V
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-Resistanceb
"500
TJ = 125_C
VDS = 30 V, VGS = 0 V
10
VDS = 24 V, VGS = 0 V, TJ = 125_C
500
VDS = 10 V, VGS = 12 V
rDS(on)
gfs
2
3.5
1.2
1.75
VGS = 12 V, ID = 1 A
0.8
1
1.5
2
200
nA
m
mA
A
VGS = 5 V, ID = 0.2 A
VDS = 10 V, ID = 0.5 A
V
"100
TJ = 125_C
Forward Transconductanceb
2.5
500
W
mS
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
38
110
33
110
8
35
9
30
14
30
pF
Switchingc
Turn-On Time
tON
Turn-Off Time
tOFF
VDD = 15 V, RL = 23 W, ID ^ 0.6 A
VGEN = 10 V, RG = 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
ns
VNDQ03
Document Number: 70219
S-04279—Rev. D, 16-Jul-01
VQ1001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
2.0
7V
VGS = 10 V
Output Characteristics for Low Gate Drive
200
VGS = 10 V
6V
160
ID – Drain Current (mA)
1.6
ID – Drain Current (A)
2.9 V
5V
1.2
0.8
4V
0.4
2.7 V
120
2.5 V
80
2.3 V
40
3V
2.1 V
1.7 V
2V
0
0
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
500
rDS(on) – On-Resistance ( Ω )
ID – Drain Current (mA)
3
VDS = 15 V
400
300
200
TJ = 125_C
25_C
100
ID = 0.2 A
0.5 A
2
1.0 A
1
–55_C
0
0
1
2
3
4
4
8
12
16
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
2.5
rDS(on) – Drain-Source On-Resistance ( Ω )
0
5
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
0
2.0
VGS = 4.5 V
6V
1.5
10 V
1.0
0.5
20
2.25
2.00
VGS = 10 V
1.75
ID = 0.5 A
1.50
0.1 A
1.25
1.00
0.75
0
0.50
0
0.5
1.0
1.5
2.0
ID – Drain Current (A)
Document Number: 70219
S-04279—Rev. D, 16-Jul-01
2.5
3.0
–50
–10
30
70
110
150
TJ – Junction Temperature (_C)
www.vishay.com
11-3
VQ1001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
Capacitance
10
120
VDS = 10 V
C – Capacitance (pF)
TJ = 150_C
ID – Drain Current (mA)
VGS = 0 V
f = 1 MHz
100
1
100_C
25_C
0.1
80
60
40
Ciss
Coss
20
Crss
–55_C
0.01
0.6
0
0.8
1.0
1.2
1.4
1.6
1.8
0
2.0
10
VGS – Gate-to-Source Voltage (V)
Gate Charge
50
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
5
4
t – Switching Time (ns)
VGS – Gate-to-Source Voltage (V)
40
Load Condition Effects on Switching
ID = 1 A
VDS = 15 V
3
24 V
2
10
td(off)
td(on)
tf
tr
1
1
0.1
0
0
80
160
240
320
400
1
Qg – Total Gate Charge (pC)
10
ID – Drain Current (A)
Drive Resistance Effects on Switching
Transconductance
500
100
TJ = –55_C
VDD = 25 V
RL = 24 W
VGS = 0 to 10 V
ID = 1 A
25_C
gfs – Forward Transconductance (µS)
t – Switching Time (ns)
30
100
6
td(off)
10
td(on)
tf
tr
400
150_C
300
200
VDS = 7.5 V
300 ms, 1% Duty Cycle
Pulse Test
100
0
1
10
50
RG – Gate Resistance ( W)
www.vishay.com
11-4
20
VDS – Drain-to-Source Voltage (V)
100
0
100
200
300
400
500
ID – Drain Current (mA)
Document Number: 70219
S-04279—Rev. D, 16-Jul-01