2N5152 2N5154 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCHES 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . DESCRIPTION 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 3 2 .5 4 (0 .1 0 0 ) The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec TO-39 metal case intended for use in switching applications. 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 4 5 ° The complementary PNP types are the 2N5151 and 2N5153 respectively TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) 2N5152 2N5154 VCBO Collector – Base Voltage (IE = 0) 100V VCEO Collector – Emitter Voltage (IB = 0) 80V VEBO Emitter – Base Voltage (IC = 0) 6V IC Continuous Collector Current 5A IC(PK) Peak Collector Current 10A IB Base Current 1A Ptot Total Dissipation at Tcase = 25°C 1W Tcase = 50°C 10W Tcase = 100°C 6.7W Tstg Operating and Storage Temperature Range Tj Junction temperature Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: [email protected] –65 to +200°C 200°C Prelim. 3/99 2N5152 2N5154 ELECTRICAL CHARACTERISTICS FOR 2N5152 (Tcase = 25°C unless otherwise stated) Parameter ICES Collector Cut Off Current ICEV Collector Cut Off Current ICEO Collector Cut Off Current IEBO Emitter Cut Off Current VCEO(SUS) Collector Emitter Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage VBE(sat) Base Emitter Saturation Voltage VBE Base Emitter Voltage hFE DC Current Gain Test Conditions Min. Typ. Max. Unit VCE = 60V VBE = 0 1 µA VCE = 100V VBE = 0 1 mA VCE = 60V Tcase = 150°C 500 VBE =- 2V µA VCE = 40V IB = 0 50 VEB = 5V IC = 0 1 µA VEB = 6V IC = 0 1 mA IC = 100mA IB = 0 IC = 2.5A IB = 250mA 0.75 IC = 5A IB = 500mA 1.5 IC = 2.5A IB = 250mA 1.45 IC = 5A IB = 500mA 2.2 IC = 2.5A VCE = 5V 1.45 IC = 50mA VCE = 5V 20 IC = 2.5A VCE = 5V 30 IC = 5A VCE = 5v 20 IC =2.5A VCE = 5V 15 IE = 0 VCB = 10V 80 V 90 Tcase = -55°C CCBO Collector Base Capacitance hFE Small Signal Current Gain IC = 0.1A VCE = 5V f = 1KHz IC = 0.5A VCE = 5v f = 20MHz ton Turn On Time toff Turn Off Time 250 f = 1MHz IC = 5A VCC = 30v IB1 = 0.5A IC = 5A VCC = 30V IB1=-IB2 = 0.5A pF 20 3 0.5 µs 1.3 µs * Pulse test tp = 300ms , d < 2% THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 15 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 175 °C/W Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 3/99 2N5152 2N5154 ELECTRICAL CHARACTERISTICS FOR 2N5154 (Tcase = 25°C unless otherwise stated) Parameter ICES Collector Cut Off Current ICEV Collector Cut Off Current ICEO Collector Cut Off Current IEBO Emitter Cut Off Current VCEO(SUS) Collector Emitter Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage VBE(sat) Base Emitter Saturation Voltage VBE Base Emitter Voltage hFE DC Current Gain Test Conditions Min. Typ. Max. Unit VCE = 60V VBE = 0 1 µA VCE = 100V VBE = 0 1 mA VCE = 60V Tcase = 150°C 500 VBE = -2V µA VCE = 40V IB = 0 50 VEB = 5V IC = 0 1 µA VEB = 6V IC = 0 1 mA IC = 100mA IB = 0 IC = 2.5A IB = 250mA 0.75 IC = 5A IB = 500mA 1.5 IC = 2.5A IB = 250mA 1.45 IC = 5A IB = 500mA 2.2 IC = 2.5A VCE = 5V 1.45 IC = 50mA VCE = 5V 50 IC = 2.5A VCE = 5V 70 IC = 5A VCE = 5v 40 IC =2.5A VCE = 5V 35 IE = 0 VCB = 10V 80 V 200 Tcase = -55°C CCBO Collector Base Capacitance hFE Small Signal Current Gain IC = 0.1A VCE = 5V f = 1KHz IC = 0.5A VCE = 5v f = 20MHz ton Turn On Time toff Turn Off Time 250 f = 1MHz IC = 5A VCC = 30v IB1 = 0.5A IC = 5A VCC = 30V IB1=-IB2 = 0.5A pF 50 3.5 0.5 µs 1.3 µs * Pulse test tp = 300ms , d < 2% THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 15 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 175 °C/W Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 3/99